人工晶体学报2025，Vol.54Issue(8)：1417-1425,9.DOI:10.16553/j.cnki.issn1000-985x.2025.0030
AlN介质层对GaN表面生长金刚石钝化膜的影响研究
Effect of AlN Dielectric Layer on Growth of Diamond Passivation Film on GaN Surface
摘要
Abstract
The growth of diamond passivation film on GaN surface can be used to improve the heat transfer ability of devices,and enhance the power characteristics and reliability of devices.The dielectric layer between GaN and diamond layers is crucial for achieving high-quality diamond on GaN surface.This study used atomic layer deposition(ALD)technology to pre-deposit a 10 nm crystalline/amorphous mixed AlN dielectric layer on the surface of GaN,and achieved high-density electrostatic self-assembly seeding on the AlN layer through surface terminal controlled diamond suspension;subsequently,an optimized microwave plasma chemical vapor deposition(MPCVD)process was used to grow nanocrystalline diamond(NCD)films with a thickness of approximately 120 nm.The surface oxygen terminal regulated nanodiamond suspension can achieve high-density seeding on the surface of AlN dielectric layer.Combined with gradient methane MPCVD diamond growth process,NCD thin films with high crystallinity,low roughness(Ra=15.2 nm),and low residual stress(0.84 GPa)were prepared.Time domain thermal reflection(TDTR)measurements indicate that the thermal conductivity of NCD film is approximately 123.85 W·m-1·K-1.The effective thermal boundary resistance(TBReff)between GaN and NCD is(9.78±0.27)m²·K·GW-1.Transmission electron microscopy(TEM)analysis shows that,AlN dielectric layer effectively protects GaN from plasma etching and achieves a smooth interface between diamond and GaN.This study shows that using thin ALD AlN as the dielectric layer for growing diamond on GaN surface can achieve electrostatic self-assembly with oxygen terminated diamond seeds,thereby increasing diamond nucleation density.Then,through gradient methane diamond deposition process,high-quality NCD films can be deposited on GaN and the thermal boundary resistance between diamond and GaN can be reduced.关键词
纳米晶金刚石/GaN/AlN介质层/热导率/界面热阻/原子层沉积/静电自组装播种Key words
nanocrystalline diamond/GaN/AlN dielectric layer/thermal conductivity/thermal boundary resistance/atomic layer deposition/electrostatic self-assembly seeding分类
信息技术与安全科学引用本文复制引用
梁礼峰,郁鑫鑫,李忠辉,刘金龙,李成明,王鑫华,魏俊俊..AlN介质层对GaN表面生长金刚石钝化膜的影响研究[J].人工晶体学报,2025,54(8):1417-1425,9.基金项目
国家自然科学基金(52172037,52350362) （52172037,52350362）
