人工晶体学报2025，Vol.54Issue(8)：1433-1440,8.DOI:10.16553/j.cnki.issn1000-985x.2024.0296
Al0.1Ga0.9N电子阻挡层对In0.26Ga0.74N/GaN多量子阱材料的光学特性影响
Effect of Al0.1Ga0.9N Electron Blocking Layer on Optical Properties of In0.26Ga0.74N/GaN Multiple Quantum Wells
摘要
Abstract
This study focuses on the effect of Al0.1Ga0.9N electron blocking layer(EBL)on the optical properties of In0.26Ga0.74N/GaN multiple quantum wells(MQWs)materials.Through atomic force microscopy(AFM)characterization,it is found that the surface roughness of the InGaN material with the inserted Al0.1Ga0.9N EBL is significantly reduced from 94.42 nm to 54.72 nm,a reduction of 42.05%.High-resolution X-ray diffraction(HRXRD)tests show that the spiro dislocation and edge dislocation densities of the material have decreased by 13.39%and 45.53%,respectively,and the steepness of the trap-barrier interface has been significantly enhanced.The photoluminescence(PL)spectroscopic study shows that not only the full width at half maximum(FWHM)of the luminescence peaks of the material becomes narrower and the luminescence intensity is enhanced,but also the luminescence wavelength shows a certain degree of redshift.It is found that the insertion of Al0.1Ga0.9N EBL can effectively reduce the defect density of In0.26Ga0.74N/GaN multiple quantum wells materials,effectively reduce the non-radiative recombination efficiency,and then enhance the luminescence performance of the materials.This study provides a necessary experimental basis for the preparation of high-efficiency solar cells.关键词
In0.26Ga0.74N/GaN多量子阱/电子阻挡层/阱垒界面质量/非辐射复合中心Key words
In0.26Ga0.74N/GaN multiple quantum well/electron blocking layer/interfacial quality between trap and barrier/non-radiation recombination center分类
数理科学引用本文复制引用
刘振华,刘胜威,王一心,单恒升..Al0.1Ga0.9N电子阻挡层对In0.26Ga0.74N/GaN多量子阱材料的光学特性影响[J].人工晶体学报,2025,54(8):1433-1440,8.基金项目
远程物联网控制器系统开发(210230007) （210230007）
