测试技术学报2025，Vol.39Issue(5)：531-539,9.DOI:10.62756/csjs.1671-7449.2025087
基于SOI的高抗过载颅内压力传感器设计与制备
Design and Fabrication of A High Anti-Overload Intracranial Pressure Sensor Based on SOI
摘要
Abstract
Intracranial pressure monitoring has important clinical value in the diagnosis and treatment of Neurosurgery,but the existing sensors have problems such as a lack of miniaturization and poor long-term stability.In this paper,a micro piezoresistive pressure-sensitive chip based on MEMS technology is pro-posed.Through the optimal design of the sensitive film structure,the intracranial pressure monitoring sen-sor with high stability and high overload resistance is realized.Through theoretical modeling and finite ele-ment simulation,the collaborative optimization model of film thickness and side length is established to improve the structural linearity.The sensitive film was formed by the combination of SOI material and a deep silicon etching process to prepare the sensor chip.The test results show that the sensitivity of the chip is up to 0.34 mV/kPa in the working environment,and the hysteresis,repeatability and nonlinear error are better than 0.13%FS,0.011%FS and 0.19%FS respectively.This study provides an expandable technical path for micro biomedical sensors.关键词
压力传感器/微机电系统/颅内压/压阻效应Key words
pressure sensor/micro-electro-mechanical system(MEMS)/intracranial pressure/piezoresis-tive effect分类
信息技术与安全科学引用本文复制引用
李丰超,康振伟,王丙寅,王志强,郝一鸣,冀鹏飞..基于SOI的高抗过载颅内压力传感器设计与制备[J].测试技术学报,2025,39(5):531-539,9.基金项目
国家自然科学基金资助项目(62304209) （62304209）
国家重点研发计划资助项目(2023YFB3209100) （2023YFB3209100）
山西省科技重大专项"揭榜挂帅"资助项目(202301030201003) （202301030201003）
山西省重点研发计划资助项目(202302030201001) （202302030201001）
山西省基础研究计划资助项目(20210302123203) （20210302123203）
