首页|期刊导航|光:科学与应用(英文版)|Non-contact and nanometer-scale measurement of PN junction depth buried in Si wafers using terahertz emission spectroscopy
Non-contact and nanometer-scale measurement of PN junction depth buried in Si wafers using terahertz emission spectroscopy
Fumikazu Murakami Yusin Yang Masayoshi Tonouchi Shinji Ueyama Kenji Suzuki Ingi Kim Inkeun Baek Sangwoo Bae Dougyong Sung Myungjun Lee Sungyoon Ryu
光:科学与应用(英文版)2025,Vol.14Issue(8):2279-2288,10.
光:科学与应用(英文版)2025,Vol.14Issue(8):2279-2288,10.DOI:10.1038/s41377-025-01911-0
Non-contact and nanometer-scale measurement of PN junction depth buried in Si wafers using terahertz emission spectroscopy
Non-contact and nanometer-scale measurement of PN junction depth buried in Si wafers using terahertz emission spectroscopy
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Fumikazu Murakami,Yusin Yang,Masayoshi Tonouchi,Shinji Ueyama,Kenji Suzuki,Ingi Kim,Inkeun Baek,Sangwoo Bae,Dougyong Sung,Myungjun Lee,Sungyoon Ryu..Non-contact and nanometer-scale measurement of PN junction depth buried in Si wafers using terahertz emission spectroscopy[J].光:科学与应用(英文版),2025,14(8):2279-2288,10.基金项目
We are grateful to Mr.Numata AND Mr.Kim for their contribution to sample preparations and experimental works.M.T.acknowledges support by JSPS KAKENHI Grant No.JP23H00184.F.M.acknowledges support in part by Grant-in-Aid for JSPS Fellows Grant No.23KJ1475 and Program for Leading Graduate Schools:"Interactive Materials Science Cadet Program". ()