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Non-contact and nanometer-scale measurement of PN junction depth buried in Si wafers using terahertz emission spectroscopy

Fumikazu Murakami Yusin Yang Masayoshi Tonouchi Shinji Ueyama Kenji Suzuki Ingi Kim Inkeun Baek Sangwoo Bae Dougyong Sung Myungjun Lee Sungyoon Ryu

光:科学与应用(英文版)2025,Vol.14Issue(8):2279-2288,10.
光:科学与应用(英文版)2025,Vol.14Issue(8):2279-2288,10.DOI:10.1038/s41377-025-01911-0

Non-contact and nanometer-scale measurement of PN junction depth buried in Si wafers using terahertz emission spectroscopy

Non-contact and nanometer-scale measurement of PN junction depth buried in Si wafers using terahertz emission spectroscopy

Fumikazu Murakami 1Yusin Yang 2Masayoshi Tonouchi 3Shinji Ueyama 4Kenji Suzuki 4Ingi Kim 5Inkeun Baek 6Sangwoo Bae 5Dougyong Sung 5Myungjun Lee 6Sungyoon Ryu7

作者信息

  • 1. Department of Electrical and Computer Engineering,Rice University,6100 Main St.,Houston,TX 77005,USA
  • 2. Process Development,Semiconductor R&D Center,Samsung Electronics Co.Ltd.,1-1 Samsungjeonja-ro,Hwaseong-si,Gyeonggi-do 18448,Republic of Korea
  • 3. Institute of Laser Engineering,Osaka University,2-6 Yamada-oka,Suita,Osaka 565-0871,Japan||Research Institute for Interdisciplinary Science,Okayama University,3-1-1 Tsushimanaka,Kita-ku,Okayama 700-8530,Japan
  • 4. Advanced Equipment Lab,Samsung Device Solutions R&D Japan,2-7 Sugasawa-cho,Yokohama Tsurumi-ku,Kanagawa 230-0027,Japan
  • 5. Core Technology R&D Team,Global Manufacturing & Infra Technology,Samsung Electronics Co.Ltd.,1-1 Samsungjeonja-ro,Hwaseong-si,Gyeonggi-do 18448,Republic of Korea
  • 6. Advanced Process Development Team 4,Semiconductor R&D Center,Samsung Electronics Co.Ltd.,1-1 Samsungjeonja-ro,Hwaseong-si,Gyeonggi-do 18448,Republic of Korea
  • 7. Metrology & Inspection Technology Team,Global Manufacturing & Infra Technology,Samsung Electronics Co.Ltd.,1-1 Samsungjeonja-ro,Hwaseong-si,Gyeonggi-do 18448,Republic of Korea
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摘要

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Fumikazu Murakami,Yusin Yang,Masayoshi Tonouchi,Shinji Ueyama,Kenji Suzuki,Ingi Kim,Inkeun Baek,Sangwoo Bae,Dougyong Sung,Myungjun Lee,Sungyoon Ryu..Non-contact and nanometer-scale measurement of PN junction depth buried in Si wafers using terahertz emission spectroscopy[J].光:科学与应用(英文版),2025,14(8):2279-2288,10.

基金项目

We are grateful to Mr.Numata AND Mr.Kim for their contribution to sample preparations and experimental works.M.T.acknowledges support by JSPS KAKENHI Grant No.JP23H00184.F.M.acknowledges support in part by Grant-in-Aid for JSPS Fellows Grant No.23KJ1475 and Program for Leading Graduate Schools:"Interactive Materials Science Cadet Program". ()

光:科学与应用(英文版)

2095-5545

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