高技术通讯2025，Vol.35Issue(6)：640-650,11.DOI:10.3772/j.issn.1002-0470.2025.06.008
SiC晶片化学力流变复合抛光及其作用机理研究
Study on chemical-assisted shear rheological polishing of silicon carbide and its mechanism
摘要
Abstract
In view of the low processing efficiency of silicon carbide(SiC)wafers,this article conducts the study on the combination of chemical and shear rheological polishing.It expounds the principle of chemical-assisted shear rheo-logical polishing(C-SRP)of 4H-SiC wafers and studies its processing mechanism.A new chemical-assisted shear rheological polishing solution suitable for 4H-SiC wafers is developed by adding chemical reagents such as KMnO4 and hydrogen ion concentration(pH)adjustor to the shear rheological polishing solution.When pH=5 and KMnO4 concentration is 2 wt.％,the processing effect of chemical-assisted shear rheological polishing(C-SRP)on 4H-SiC wafers is optimal,and the surface roughness value of Si surface can reach 0.47 nm,with material removal rate of 37.4nm·min-1;the surface roughness value of C surface can reach 0.35 nm,with material removal rate of 44.6 nm·min-1.The chemical composition of the surface of 4H-SiC wafers under different conditions is analyzed by X-ray photoeletron spectroscopy(XPS)technology.The oxide generated during the C-SRP process can be com-pletely removed during the polishing process.The surface atoms of Si surface are more difficult to undergo oxidation reaction than those of C surface,and the oxide generated on Si surface is more difficult to be removed,resulting in the material removal rate of Si surface always being lower than that of C surface.关键词
碳化硅/力流变抛光/化学作用/抛光液/作用机理Key words
silicon carbide/shear rheological polishing/chemical action/polishing solution/mechanism of action引用本文复制引用
朱铭辉,李鹏,袁巨龙,周见行..SiC晶片化学力流变复合抛光及其作用机理研究[J].高技术通讯,2025,35(6):640-650,11.基金项目
浙江省"尖兵领雁+X"科技计划(2025C01077)资助项目. （2025C01077）
