苏州科技大学学报（自然科学版）2025，Vol.42Issue(3)：52-57,6.DOI:10.12084/j.issn.2096-3289.2025.03.007
基于沟道电阻调制的高线性GaN HEMT器件研究
A study on high-linear GaN HEMT devices based on channel resistance modulation
摘要
Abstract
With the continuous increase in requirements for high-frequency and high-power device linearity in 5G communications,millimeter-wave radar,and satellite communication systems,the issue of nonlinear distortion faced by traditional AlGaN/GaN High Electron Mobility Transistors(HEMTs)in power amplifier application has become increasingly prominent.This paper systematically investigates the influence of gate-source/gate-drain spacing(Lgs/Lgd),distribution of aluminum composition in the heterojunction barrier layer,and the recessed struc-ture beneath the gate on the transfer characteristics,especially the Gate Voltage Swing(GVS),of the devices.Comparative analysis reveals that reducing the gate-source and gate-drain spacing and increasing the aluminum composition effectively enhance the GVS of the devices.Reducing the aluminum composition under the gate can improve the GVS and cause the threshold voltage to drift positively.A recessed structure beneath the gate is uti-lized to improve the GVS of the device by 55.56％.This study provides design methods and theoretical basis for the structural optimization of high-linearity GaN power devices.关键词
线性度/Al组分/栅源栅漏间距/AlGaN/GaN HEMT/凹槽结构Key words
linearity/aluminum composition/gate-source/gate-drain spacing/AlGaN/GaN HEMT/recessed struc-ture分类
能源科技引用本文复制引用
陈丽香,刘世伟,吴友军,孙云飞..基于沟道电阻调制的高线性GaN HEMT器件研究[J].苏州科技大学学报（自然科学版）,2025,42(3):52-57,6.基金项目
国家自然科学基金项目(62104167) （62104167）
江苏省自然科学基金项目(BK20210863 （）
BK20221385) （）
江苏省大学生创新创业训练计划项目(202310332013Z) （202310332013Z）
