n型TOPCon太阳电池中PL暗片的形成原因及改善措施研究OA

This paper first introduces the process flow of n-TOPCon solar cells,and identifies the main causes of PL dark solar cells by analyzing each process.Then,a targeted approach is proposed to adopt a dual doped poly-Si/silicon oxide structure for the rear passivation contact structures of solar cells,and mass production verification is carried out on n-TOPCon solar cells with improved phosphine flow rate,preparation time of tunneling silicon oxide layer,and the use of this structure.The research results show that:1)Improper setting of phosphine flow rate parameters is an important reason for the generation of PL dark solar cells.Reducing the phosphine flow rate can effectively reduce the number of edge-corner dark solar cells,but a significant decrease can lead to a decrease in the photoelectric conversion efficiency of the solar cells.Moderately reducing the flow rate of phosphine can improve the photoelectric conversion efficiency of solar cells while reducing the number of edge-corner dark solar cells.2)After increasing the deposition time of the tunneling silicon oxide layer,the number of edge-corner dark solar cells reduces effectively.3)After moderately reducing the flow rate of phosphine,increasing the preparation time of tunneling silicon oxide layer,and adopting a backside dual doped poly-Si/silicon oxide structure,the proportion of edge-corner dark solar cells in solar cells decreased from 0.64%to 0.07%,and the photoelectric conversion efficiency of solar cells increased by 0.07%.It shows that this method can not only reduce the number of PL dark solar cells in the mass production of solar cells and improve the yield of solar cells,but also improve the photoelectric conversion efficiency of solar cells,which has great potential for application.