李阳 1高振良 1卿玉长 2刘春太 1申长雨 1刘宪虎 1范冰冰3
作者信息
- 1. 郑州大学 橡塑模具国家工程研究中心 材料成型及模具技术教育部重点实验室,郑州 450002
- 2. 西北工业大学材料学院,西安 710072
- 3. 郑州大学 材料科学与工程学院,郑州 450001
- 折叠
摘要
Abstract
Titanium dioxide(TiO2)exhibits weak surface electron polarization and a poor response in the microwave region,resulting in its limited electromagnetic(EM)loss capability,which restricts its application in EM wave absorption.Recent research has revealed that the reduced phase of TiO2,denoted as TixO2x-1(1≤x≤10),possesses both metallic and semiconducting properties.This duality,coupled with its relatively high electrical conductivity,positions TixO2x-1 as a promising candidate for the next generation of EM wave absorbers.However,current investigations into TixO2x-1 absorbers primarily focus on the EM property modulation of black TiO2 and its composites,while the influence of crystal structure,lattice defects,and band structure on the EM parameters and absorption performance of TixO2x-1 absorbers remains unclear.Consequently,there is a lack of a comprehensive TixO2x-1 absorber system both domestically and internationally.Based on the fundamental principles of EM wave absorption materials,this study discusses the crystal structure and formation mechanism of TixO2x-1 and defective TiO2,as required by semiconductor metal oxides.The paper summarizes the high-efficiency EM wave absorption properties of TiO2-derived TixO2x-1 absorbers with various texture designs,achieved through defect engineering and interface engineering.Focusing on the challenges of"poor absorbing performance"and"unclear absorbing mechanisms"in TixO2x-1 absorbers,this work aims to achieve optimal design of TixO2x-1 materials,enhance their absorbing capabilities,and establish an electromagnetic control mechanism for oxide-semiconductor absorbers.By employing methods such as defect regulation,compositional optimization,and interface design,multiple EM loss mechanisms including conductivity loss,dipole polarization,interface polarization,and coupling effects,are established and optimized.Accordingly,this approach improves the impedance matching and EM loss capabilities of TixO2x-1-based absorbers,ultimately resulting in absorbers with superior wave-absorbing performance.Finally,by integrating domestic and international research progress,this paper proposes a novel design strategy for TixO2x-1 absorbers,which holds significant implications for the future development and application of semiconductor metal oxide absorbers.关键词
TixO2x-1/缺陷工程/界面工程/半导体金属氧化物/电磁波吸收性能Key words
TixO2x-1/defect engineering/interface engineering/semiconductor metal oxide/electromagnetic wave absorption performance分类
通用工业技术
