首页|期刊导航|半导体学报（英文版）|Reducing specific contact resistivity of V/Al/Ti/Au n-electrode on n-AlGaN with Al content over 80%for far-UVC LEDs

Reducing specific contact resistivity of V/Al/Ti/Au n-electrode on n-AlGaN with Al content over 80%for far-UVC LEDs

Jiale Peng Xiaojuan Sun Dabing Li Ke Jiang Shanli Zhang Jianwei Ben Kexi Liu Ziyue Qin Ruihua Chen Chunyue Zhang Shunpeng Lv

半导体学报（英文版）2025，Vol.46Issue(9)：41-49,9.

半导体学报（英文版）2025，Vol.46Issue(9)：41-49,9.DOI:10.1088/1674-4926/25010026

Reducing specific contact resistivity of V/Al/Ti/Au n-electrode on n-AlGaN with Al content over 80%for far-UVC LEDs

Jiale Peng ¹Xiaojuan Sun ¹Dabing Li ¹Ke Jiang ¹Shanli Zhang ¹Jianwei Ben ¹Kexi Liu ¹Ziyue Qin ¹Ruihua Chen ¹Chunyue Zhang ¹Shunpeng Lv¹

作者信息

1. State Key Laboratory of Luminescence Science and Technology,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China||School of Optoelectronics,University of Chinese Academy of Sciences,Beijing 100049,China
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摘要

关键词

Al-rich n-AlGaN/specific contact resistivity/far-UVC LED

Key words

Al-rich n-AlGaN/specific contact resistivity/far-UVC LED

引用本文复制引用

Jiale Peng,Xiaojuan Sun,Dabing Li,Ke Jiang,Shanli Zhang,Jianwei Ben,Kexi Liu,Ziyue Qin,Ruihua Chen,Chunyue Zhang,Shunpeng Lv..Reducing specific contact resistivity of V/Al/Ti/Au n-electrode on n-AlGaN with Al content over 80%for far-UVC LEDs[J].半导体学报（英文版）,2025,46(9):41-49,9.

基金项目

This work was supported by National Key R&D Program of China(2022YFB3605103),National Natural Science Founda-tion of China(62425408,62121005,U22A2084,12234018),Youth Innovation Promotion Association of the Chinese Academy of Sciences(2023223),Natural Science Foun-dation of Jilin Province(20230101345JC,20230101360JC,SKL202302026),Young Elite Scientist Sponsorship Program by CAST(YESS20200182). （2022YFB3605103）

半导体学报（英文版）

ISSN：1674-4926

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