首页|期刊导航|半导体学报（英文版）|AlGaN/GaN-based SBDs grown on silicon substrates with trenched n+-GaN cap layer and local passivation layer to improve BFOM and dynamic properties

AlGaN/GaN-based SBDs grown on silicon substrates with trenched n+-GaN cap layer and local passivation layer to improve BFOM and dynamic properties

Zhizhong Wang Dabing Li Xiao Wei Sun Zi-Hui Zhang Jingting He Fuping Huang Xuchen Gao Kangkai Tian Chunshuang Chu Yonghui Zhang Shuting Cai Xiaojuan Sun

半导体学报（英文版）2025，Vol.46Issue(9)：50-61,12.

半导体学报（英文版）2025，Vol.46Issue(9)：50-61,12.DOI:10.1088/1674-4926/25010024

AlGaN/GaN-based SBDs grown on silicon substrates with trenched n+-GaN cap layer and local passivation layer to improve BFOM and dynamic properties

Zhizhong Wang ¹Dabing Li ²Xiao Wei Sun ³Zi-Hui Zhang ⁴Jingting He ⁵Fuping Huang ⁵Xuchen Gao ¹Kangkai Tian ⁵Chunshuang Chu ⁵Yonghui Zhang ¹Shuting Cai ⁵Xiaojuan Sun²

作者信息

1. State Key Laboratory of Reliability and Intelligence of Electrical Equipment and School of Electronics and Information Engineering,Hebei Uni-versity of Technology,Tianjin 300401,China
2. State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sci-ences,Changchun 130033,China
3. Institute of Nanoscience and Applications,and Department of Electrical and Electronic Engineering,Southern University of Science and Tech-nology,Shenzhen 518055,China
4. State Key Laboratory of Reliability and Intelligence of Electrical Equipment and School of Electronics and Information Engineering,Hebei Uni-versity of Technology,Tianjin 300401,China||School of Integrated Circuits,Guangdong University of Technology,Guangzhou 510006,China
5. School of Integrated Circuits,Guangdong University of Technology,Guangzhou 510006,China
折叠

摘要

关键词

AlGaN/GaN-based Schottky barrier diodes(SBDs)/n+-GaN cap layer/Si3N4 protective layer

Key words

AlGaN/GaN-based Schottky barrier diodes(SBDs)/n+-GaN cap layer/Si3N4 protective layer

引用本文复制引用

Zhizhong Wang,Dabing Li,Xiao Wei Sun,Zi-Hui Zhang,Jingting He,Fuping Huang,Xuchen Gao,Kangkai Tian,Chunshuang Chu,Yonghui Zhang,Shuting Cai,Xiaojuan Sun..AlGaN/GaN-based SBDs grown on silicon substrates with trenched n+-GaN cap layer and local passivation layer to improve BFOM and dynamic properties[J].半导体学报（英文版）,2025,46(9):50-61,12.

基金项目

The work is supported by National Natural Science Founda-tion of China under grant U23A20361 and Key Area R&D Pro-gram of Guangdong Province under grant 2022B0701180001. （）

半导体学报（英文版）

ISSN：1674-4926

访问量0

下载量0

段落导航