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Improving electrical performance and fringe effect in p-type SnOx thin film transistors via Ta incorporation

Yu Song Runtong Guo Ruohao Hong Rui He Xuming Zou Benjamin Iñiguez Denis Flandre Lei Liao Guoli Li

半导体学报（英文版）2025，Vol.46Issue(9)：77-85,9.

半导体学报（英文版）2025，Vol.46Issue(9)：77-85,9.DOI:10.1088/1674-4926/25010031

Improving electrical performance and fringe effect in p-type SnOx thin film transistors via Ta incorporation

Yu Song ¹Runtong Guo ¹Ruohao Hong ¹Rui He ¹Xuming Zou ¹Benjamin Iñiguez ²Denis Flandre ³Lei Liao ⁴Guoli Li⁴

作者信息

1. School of Physics and Electronics,Hunan University,Changsha 410082,China
2. Department of Electronics Engineering,Universitat Rovira I Virgili,Tarragona 43007,Spain
3. Institute of Information and Communication Technologies,Electronics and Applied Mathematics,Université catholique de Louvain,Louvain-la-Neuve 1348,Belgium
4. College of Semiconductor(College of Integrated Circuits),Hunan University,Changsha 410082,China
折叠

摘要

关键词

tin monoxide/p-type thin film transistors/Ta doping/fringe effect/on/off current ratio

Key words

tin monoxide/p-type thin film transistors/Ta doping/fringe effect/on/off current ratio

引用本文复制引用

Yu Song,Runtong Guo,Ruohao Hong,Rui He,Xuming Zou,Benjamin Iñiguez,Denis Flandre,Lei Liao,Guoli Li..Improving electrical performance and fringe effect in p-type SnOx thin film transistors via Ta incorporation[J].半导体学报（英文版）,2025,46(9):77-85,9.

基金项目

This work was supported in part by National Key R&D Pro-gram of China(Grant No.2022YFE0141500),National Natural Science Foundation of China(Grant Nos.62004065 and 62274059). （Grant No.2022YFE0141500）

半导体学报（英文版）

ISSN：1674-4926

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