电子器件2025，Vol.48Issue(4)：741-746,6.DOI:10.3969/j.issn.1005-9490.2025.04.004
ε-Ga2O3器件各向异性迁移率的TCAD仿真
TCAD Simulation of Anisotropic Mobility in ε-Ga2O3 Devices
摘要
Abstract
Gallium oxide(Ga2O3)is a semiconductor material with an ultra-wide bandgap,possessing excellent physical properties such as high breakdown field strength,high Baliga's figure of merit,and high thermal stability.It has certain advantages in epitaxial growth and device fabrication and is widely regarded as an ideal candidate material for next-generation power electronics and deep ultraviolet optoelectronic devices.The anisotropic mobility of ε-Ga2O3 field-effect transistors is introduced through first-principles calculations and TCAD simulation.The results show that compared with the<001>and<111>crystal orientations,ε-Ga2O3 field effect transistors along the<111>crystal orientation demonstrate larger transconductance and better amplification capability in the on-state.They also exhibit lower on-state resistance RDS(on)and lower conduction losses.However,during the switching from on-state to off-state,disadvantages emerge including slower switching speeds and increased power dissipation.These results provide important references for the future de-sign and optimization of ε-Ga2O3 MOSFET devices.关键词
氧化镓/各向异性/场效应管/半导体材料/功率电子Key words
Ga2O3/anisotropy/field-effect transistor/semiconductor material/power electronics分类
信息技术与安全科学引用本文复制引用
邓南发,周贤中..ε-Ga2O3器件各向异性迁移率的TCAD仿真[J].电子器件,2025,48(4):741-746,6.基金项目
国家自然科学基金项目(61704032) （61704032）
