电子器件2025，Vol.48Issue(4)：747-751,5.DOI:10.3969/j.issn.1005-9490.2025.04.005
基于调幅调相Enhanced Doherty放大器的设计与实现
Design and Implementation of Enhanced Doherty Amplifier Based on Amplitude Modulation and Phase Modulation
罗晚会 1张宁2
作者信息
- 1. 苏州远创达科技有限公司,江苏苏州 215100
- 2. 浙江金融职业学院计财处,浙江 杭州 310018
- 折叠
摘要
Abstract
A 200 W dual-path enhanced Doherty power amplifier utilizing GaN technology is introduced,which operates over a frequency range of 3.4 GHz to 3.6 GHz.Through careful design of the device power ratio and adjustment of the gate operating voltage for the driver and peak path amplifiers,the amplifier achieves high-efficiency output while maintaining optimal linearity.During tests using a single-car-rier WCDMA modulation signal,the demo board achieves a module efficiency of 38％at an output power of 44.5 dBm across the 3.4 GHz to 3.6 GHz frequency band,with a P3 power exceeding 53 dBm.For an LTE signal with a 40 MHz bandwidth,after optimizing with digital pre-distortion(DPD),the adjacent channel power ratio(ACPR)value is below-53 dBc,significantly surpassing the-45 dBc linear stand-ard required for communication base stations.关键词
enhanced Doherty放大器/氮化镓/PAR/邻道功率比/数字预失真Key words
enhanced Doherty amplifier/GaN/PAR/ACPR/DPD分类
信息技术与安全科学引用本文复制引用
罗晚会,张宁..基于调幅调相Enhanced Doherty放大器的设计与实现[J].电子器件,2025,48(4):747-751,5.
