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A new in situ method for modifying the Schottky barrier height at buried metal-organic semiconductor interfaces

Henning Sirringhaus

国家科学评论（英文版）2025，Vol.12Issue(8)：96-97,2.

国家科学评论（英文版）2025，Vol.12Issue(8)：96-97,2.DOI:10.1093/nsr/nwaf252

A new in situ method for modifying the Schottky barrier height at buried metal-organic semiconductor interfaces

Henning Sirringhaus¹

作者信息

1. Cavendish Laboratory,University of Cambridge,UK
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Henning Sirringhaus..A new in situ method for modifying the Schottky barrier height at buried metal-organic semiconductor interfaces[J].国家科学评论（英文版）,2025,12(8):96-97,2.

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