液晶与显示2025，Vol.40Issue(9)：1258-1267,10.DOI:10.37188/CJLCD.2025-0133
有源层厚度对Al-Zn-Sn-O薄膜晶体管和反相器性能的影响
Influence of active layer thickness on performance of Al-Zn-Sn-O thin-film transistors and inverters
摘要
Abstract
To investigate the influence of active layer thickness on the performance of aluminum zinc tin oxide(AZTO)thin-film transistors(TFTs)and inverters,and to promote their application in logic circuits,this paper prepared AZTO thin films with different thicknesses by radio frequency magnetron sputtering.These films were used as active layers to construct bottom-gate top-contact AZTO-TFT devices.The microstructure and composition of the films were characterized by field emission scanning electron microscopy(SEM)and X-ray photoelectron spectroscopy(XPS),and the electrical properties of the devices were tested.It was found that with the increase of the thickness of the AZTO active layer,the oxygen vacancy concentration gradually increased.Moderate oxygen vacancies can weaken the scattering effect of defects and impurities on carriers,reduce the transmission resistance,and thus improve the field-effect mobility.At the same time,the device can pass more carriers in the on-state,resulting in an increase in the source-drain current and the on/off ratio.The results showed that when the thickness of the active layer was 82 nm,the quality of the AZTO film was the best,and the device performance was optimal,with a field-effect mobility of 7.47 cm2·V-1·s-1,a threshold voltage of 14.25 V,a subthreshold swing of 1.35 V/dec,and a current on/off ratio of 6.16×107.The resistor-loaded inverter prepared under this optimized condition achieved a high gain of 8.8 at a supply voltage(VDD)of 25 V,and had full-swing characteristics and good noise margin,which can effectively drive the next-stage components of the logic circuit.关键词
薄膜晶体管/AZTO/电阻负载型反相器Key words
thin-film transistors/AZTO/resistive-load inverters分类
信息技术与安全科学引用本文复制引用
库来哲,王超,郭亮,王杰阳,初学峰,杨帆,郝云鹏,高寒松,赵洋..有源层厚度对Al-Zn-Sn-O薄膜晶体管和反相器性能的影响[J].液晶与显示,2025,40(9):1258-1267,10.基金项目
国家自然科学基金(No.62374073) （No.62374073）
吉林省科技发展计划(No.YDZJ202301ZYTS489) Supported by National Natural Science Foundation of China(No.62374073) （No.YDZJ202301ZYTS489）
Science and Technology Development Plan of Jilin Province(No.YDZJ202301ZYTS489) （No.YDZJ202301ZYTS489）
