成都大学学报（自然科学版）2025，Vol.44Issue(3)：307-314,8.DOI:10.3969/j.issn.1004-5422.2025.03.012
氧化铋忆阻器及其性能提升研究
Study on Bi2O3 Memristors and Their Performance Enhancement
齐海歌 1杨峰 2赵立峰2
作者信息
- 1. 西南交通大学机械工程学院,四川成都 610031
- 2. 西南交通大学 电气工程学院,四川成都 610031
- 折叠
摘要
Abstract
In this study,the researchers successfully fabricated an ITO/Bi2O3/Ag memristor by using magnetron sputtering technology and obtained a complete I-V characteristic curve.However,the results re-vealed a relatively low switching ratio.To address this issue,a Ti buffer layer was introduced between the Bi2O3 and Ag electrode,resulting in the fabrication of an ITO/Bi2O3/Ti/Ag memristor.Although the switching ratio improved,the cycling stability significantly deteriorated.To further optimize the device per-formance,the top Ag electrode was replaced by a non-metallic TiN electrode,leading to the successful preparation of an ITO/Bi2O3/Ti/TiN memristor.This device exhibited excellent operational characteristics at a low current of 10-6 A,with both Set and Reset voltages below 1 V.The switching ratio was enhanced to approximately 15,and the cycling stability was also significantly improved.关键词
Bi2O3/忆阻器/磁控溅射/缓冲层/开关比Key words
Bi2O3/memristor/magnetron sputtering/buffer layer/switching ratio分类
信息技术与安全科学引用本文复制引用
齐海歌,杨峰,赵立峰..氧化铋忆阻器及其性能提升研究[J].成都大学学报（自然科学版）,2025,44(3):307-314,8.
