重庆大学学报2025，Vol.48Issue(9)：50-56,7.DOI:10.11835/j.issn.1000-582X.2024.207
抑制碳化硅MOSFET阈值电压漂移的驱动电路
Driving circuit for suppressing threshold voltage drift in silicon carbide MOSFETs
赵柯 1蒋华平 1汤磊 1钟笑寒 1谢宇庭 1胡浩伟 1肖念磊 1黄诣涵 1刘立1
作者信息
- 1. 重庆大学 输变电装备技术全国重点实验室,重庆 400044
- 折叠
摘要
Abstract
Threshold voltage drift in silicon carbide metal-oxide-semiconductor field-effect transistors(MOSFETs)poses a significant challenge to device reliability in practical applications.This paper reviews the characteristics and existing theoretical models of threshold voltage drift in silicon carbide MOSFETs and proposes a novel gate driving method and circuit to mitigate this issue.The proposed circuit differentiates the device's turn-off dynamic process from the post turn-off gate voltage by introducing an intermediate voltage level,thereby effectively suppressing threshold voltage drift while retaining the benefits of a negative gate turn-off voltage.An experimental platform was constructed to evaluate the proposed driving circuit.Experimental results indicate that,under the specified conditions,the new circuit reduces threshold voltage drift by 37%compared to conventional driving methods.关键词
碳化硅/金属-氧化物-半导体场效应晶体管器件/阈值电压/栅极驱动器Key words
silicon carbide/metal-oxide-semiconductor field-effect transistor(MOSFET)/threshold voltage/gate driver分类
信息技术与安全科学引用本文复制引用
赵柯,蒋华平,汤磊,钟笑寒,谢宇庭,胡浩伟,肖念磊,黄诣涵,刘立..抑制碳化硅MOSFET阈值电压漂移的驱动电路[J].重庆大学学报,2025,48(9):50-56,7.
