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厚度调控的二维α-In2Se3可调谐宽谱偏振光电探测器

舒胜 李京波 高伟 杨孟孟

国防科技大学学报2025,Vol.47Issue(5):41-50,10.
国防科技大学学报2025,Vol.47Issue(5):41-50,10.DOI:10.11887/j.issn.1001-2486.25010007

厚度调控的二维α-In2Se3可调谐宽谱偏振光电探测器

Two-dimensional α-In2Se3 based photodetectors for tunable and broadband polarization response via thickness regulation

舒胜 1李京波 2高伟 1杨孟孟1

作者信息

  • 1. 华南师范大学 电子科学与工程学院(微电子学院),广东 佛山 528225
  • 2. 浙江大学 光电科学与工程学院,浙江 杭州 310027
  • 折叠

摘要

Abstract

In current research,less attention has been paid to the relationship between the thickness and optoelectronic properties of α-In2Se3,and most research has been focused on the mechanical exfoliation of α-In2Se3 nanosheets,which is not conducive to future industrial applications.A modified physical vapor deposition method for the controllable growth of α-In2Se3 was proposed,and the broad-spectrum response performance of three thicknesses of α-In2Se3 nanosheets in the visible to near-infrared wavelength range was systematically studied.The results indicate that the thickness of α-In2Se3 nanosheets can significantly regulate the photoelectric performance,and the photoresponsivity and specific detection rate increase with increasing thickness.In addition,it was found that the α-In2Se3 with a thickness of 32.8 nm exhibited a photocurrent anisotropy ratio(dichroic ratio)of 4 at 635 nm,indicating good polarization-sensitive detection functionality.In summary,the two-dimensional α-In2Se3 prepared by the physical vapor deposition method demonstrates a wide visible-infrared spectral response and good polarization detection ability,making it an ideal candidate material for two-dimensional multifunctional optoelectronic devices.

关键词

α-In2Se3/物理气相沉积/厚度调控/光电探测器/偏振探测

Key words

α-In2Se3/physical vapor deposition/thickness regulation/photodetector/polarization detection

分类

信息技术与安全科学

引用本文复制引用

舒胜,李京波,高伟,杨孟孟..厚度调控的二维α-In2Se3可调谐宽谱偏振光电探测器[J].国防科技大学学报,2025,47(5):41-50,10.

基金项目

国家自然科学基金资助项目(62004071) (62004071)

广东省基础与应用基础研究基金资助项目(2022A1515110981) (2022A1515110981)

国防科技大学学报

OA北大核心

1001-2486

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