人工晶体学报2025，Vol.54Issue(9)：1509-1524,16.DOI:10.16553/j.cnki.issn1000-985x.2025.0066
热壁CVD制备工艺对8英寸SiC外延层厚度均匀性的影响
Impacts of Hot Wall CVD Process Conditions on Thickness Uniformity of 8-Inch SiC Epitaxial Layer
鹿润林 1郑丽丽 1张辉 2王人松 3胡动力3
作者信息
- 1. 清华大学航天航空学院,北京 100084
- 2. 清华大学公共安全研究院,北京 100084
- 3. 连科半导体有限公司,无锡 214194
- 折叠
摘要
Abstract
A mathematical model considering substrate rotation,Si-C-Cl-H system reaction mechanism and multi-physical heat and mass transport process were established for a typical 8-inch hot-wall horizontal SiC epitaxial growth system,and it was used for three-dimensional numerical simulation research.In particular,the effects of different substrate surface average temperature,inlet flow rate,and inlet Si/H2 ratio on the growth rate and thickness uniformity of epitaxial layer were studied.The results show that the substrate rotation improves the uniformity of temperature distribution on the substrate surface,and the instantaneous growth rate of SiC is mainly affected by the concentration of growth components near the surface.The thickness uniformity of epitaxial layer is mainly affected by the distribution of the instantaneous growth rate of SiC along the flow direction.The instantaneous growth rate of leading edge and trailing edge of substrate must compensate each other to improve the thickness uniformity.Increasing the average temperature of substrate surface,reducing the inlet flow rate and decreasing the Si/H2 ratio of the inlet gas all lead to change of distribution of the instantaneous growth rate along the flow direction from concave to convex,and the distribution of the actual growth rate on substrate surface gradually changes from the edge low center high to the edge high center low.The inlet flow rate has the greatest influence on the instantaneous growth rate distribution in the parameter range investigated.关键词
碳化硅/外延生长/化学气相沉积/热-质输运/数学模型Key words
silicon carbide/epitaxy/chemical vapor deposition/heat-mass transport/numerical model分类
化学化工引用本文复制引用
鹿润林,郑丽丽,张辉,王人松,胡动力..热壁CVD制备工艺对8英寸SiC外延层厚度均匀性的影响[J].人工晶体学报,2025,54(9):1509-1524,16.
