人工晶体学报2025，Vol.54Issue(9)：1525-1533,9.DOI:10.16553/j.cnki.issn1000-985x.2025.0028
直拉法单晶硅生长的氧含量控制研究
Control of Oxygen Content During the Growth of Single Crystal Silicon by Czochralski Method
摘要
Abstract
Single crystal silicon by Czochralski method is the raw material for preparing N-type high-efficiency solar cells,and its oxygen content is directly related to the efficiency and stability of solar cells.Reducing the oxygen dissolution rate by changing the crucible wall temperature distribution during the growth of single crystal silicon is an important method for oxygen reduction.This paper proposes three structural solutions of the heater to change the temperature distribution of the crucible wall and studies their effects on temperature distribution,melt flow,crystallization interface shape and oxygen impurity transport by numerical simulation.The results show that when the long side heater is used,the crucible wall temperature increases first and then decreases,and its crystallization interface deflection and oxygen content are the highest,when the short side heater scheme and the insulation ring scheme are used,the crucible wall temperature presents a monotonically increasing distribution,and the crystallization interface deflection and oxygen content are lower,which are closely related to the temperature distribution,the melt flow,and the solubility of the oxygen impurities in the crucible wall and transport properties in the different schemes.A complete set of oxygen transport analysis methods is further summarised and proposed:the exact source and transport process of oxygen at the crystallization interface are clarified by mapping the transport path of oxygen in the melt.This method provides a theoretical basis for reducing the oxygen content inside single crystal silicon.关键词
太阳能用单晶硅/直拉法/热质输运/结晶界面/氧杂质/数值模拟Key words
monocrystalline silicon for solar energy/Czochralski method/thermal and mass transport/crystallization interface/oxygen impurity/numerical simulation分类
数理科学引用本文复制引用
李建铖,钟泽琪,王军磊,李早阳,文勇,王磊,刘立军..直拉法单晶硅生长的氧含量控制研究[J].人工晶体学报,2025,54(9):1525-1533,9.基金项目
国家重点研发计划课题(2023YFB4204601) （2023YFB4204601）
内蒙古自治区科技创新重大示范工程"揭榜挂帅"项目(2023JBGS0017,2024JBGS0004) （2023JBGS0017,2024JBGS0004）
宜宾市"揭榜挂帅"科技项目(2023JB005) （2023JB005）
