人工晶体学报2025，Vol.54Issue(9)：1534-1546,13.DOI:10.16553/j.cnki.issn1000-985x.2025.0053
重掺锑直拉硅单晶中管道问题的数值模拟
Numerical Simulation for Pipeline Problem of Highly Sb-Doped Czochralski Silicon Single Crystal
摘要
Abstract
The pipeline problem due to the facet effect often appears in the growth of<111>-oriented highly Sb-doped silicon single crystal,seriously impacting the quality of silicon wafer,which needs to be solved urgently.In this study,several solutions are provided theoretically for pipeline problem of 8 inch(1 inch=2.54 cm)highly Sb-doped silicon single crystal,and then tested through the simulation with CGSim software.The obtained results indicate that the increase of pulling speed(V)and crystal rotation speed(M)accompanied with the decrease of crucible rotation speed(N)is an effective solution to suppress the facet effect.This solution can improve the shape of solid-liquid interface remarkably,enhance temperature gradient and velocity of flow near the solid-liquid interface,and reduce the thermal stress of crystal.The optimal technical parameters are V=0.7 mm/min,M=17 r/min and N=-7 r/min.关键词
重掺锑硅单晶/管道问题/小平面效应/数值模拟Key words
highly Sb-doped silicon single crystal/pipeline problem/facet effect/numerical simulation分类
数理科学引用本文复制引用
李晓川,马三宝,周锋子,任永鹏,马武祥,梅昊天..重掺锑直拉硅单晶中管道问题的数值模拟[J].人工晶体学报,2025,54(9):1534-1546,13.基金项目
龙门实验室重大科技项目(231100220100) （231100220100）
龙门实验室前沿探索项目(LMQYTSKT012) （LMQYTSKT012）
