人工晶体学报2025，Vol.54Issue(9)：1558-1565,8.DOI:10.16553/j.cnki.issn1000-985x.2025.0048
Zn离子掺杂γ-CuI晶体的生长及闪烁性能的研究
Growth and Scintillation Properties of Zn Ions Doped γ-CuI Crystals
摘要
Abstract
In this paper,high purity γ-CuI raw materials were purified using recrystallization and zone melting methods,andγ-CuI single crystals doped with different Zn ion concentrations were grown by Bridgman method.The crystal structure,photoluminescence,X-ray excited optical luminescence,and fluorescence lifetime of the samples were thoroughly investigated.X-ray diffraction and scanning electron microscopy analyses confirm the high purity of the synthesized γ-CuI samples and the successful incorporation of Zn ions into the γ-CuI lattice.The photoluminescence and X-ray excited emission spectra indicate that Zn ion doping enhanced the emissions of free excitons and Cu+vacancies while suppressing deep-level emissions.At a Zn ion doping concentration of 5％,the Cu0.95I∶Zn0.05 crystal demonstrats a fluorescence lifetime of 0.36 ns,which is significantly better than that of γ-CuI(0.62 ns).关键词
γ-CuI晶体/Zn离子掺杂/重结晶提纯/区域熔炼法/坩埚下降法/超快衰减时间Key words
γ-CuI crystal/Zn ion doping/recrystallization purification/zone melting method/Bridgman method/ultrafast decay time分类
数理科学引用本文复制引用
陈灿,胡祎哲,张智瑾,潘建国,潘尚可..Zn离子掺杂γ-CuI晶体的生长及闪烁性能的研究[J].人工晶体学报,2025,54(9):1558-1565,8.基金项目
国家自然科学基金(12375180,61775108) （12375180,61775108）
