人工晶体学报2025，Vol.54Issue(9)：1566-1573,8.DOI:10.16553/j.cnki.issn1000-985x.2025.0060
高迁移率的硼掺杂单晶金刚石微波等离子体化学气相沉积生长及电学性质研究
Growth and Electrical Properties of High-Mobility Boron-Doped Single Crystal Diamond via Micro wave Plasma Chemical Vapor Deposition
摘要
Abstract
High-crystallinity and high-mobility boron-doped single crystal diamond films are the key to realizing high-voltage and high-power electronic devices.In this study,microwave plasma chemical vapor deposition(MPCVD)technology was employed,combined with a two-step growth method and a low-temperature oxygen-assisted growth strategy,to successfully prepare high-mobility boron-doped single crystal diamond films with extensive electrical property tuning.The films were characterized using X-ray diffraction(XRD),Hall effect measurements,and X-ray photoelectron spectroscopy(XPS).XRD analysis reveals an XRD peak full width at half maximum(FWHM)of less than 60″,indicating excellent crystalline quality.Hall effect measurements demonstrats precise control over hole concentrations ranging from 1014 to 1017 cm-3,with a maximum room-temperature hole mobility exceeding 1 400 cm2/(V·s),reaching the international advanced level.XPS characterization confirms successful boron incorporation and reveals a direct correlation between crystalline perfection and high carrier mobility,identifying high crystalline quality as a key factor for achieving high mobility.This work establishes a robust technological framework for synthesizing high-quality boron-doped diamond films,providing key materials for the development of high-performance diamond devices.关键词
单晶金刚石/外延生长/硼掺杂/MPCVD/电学性质/迁移率/功率器件Key words
single crystal diamond/epitaxial growth/boron doping/MPCVD/electrical property/mobility/power device分类
数理科学引用本文复制引用
胡愈硕,杨国健,曹光宇,刘赐恩,张星,龙浩,徐翔宇,张洪良..高迁移率的硼掺杂单晶金刚石微波等离子体化学气相沉积生长及电学性质研究[J].人工晶体学报,2025,54(9):1566-1573,8.基金项目
国家自然科学基金(22275154) （22275154）
