人工晶体学报2025，Vol.54Issue(9)：1574-1583,10.DOI:10.16553/j.cnki.issn1000-985x.2025.0065
低温超临界流体工艺对退化的Ni/β-Ga2O3肖特基势垒二极管电学性能的影响
Effect of Low-Temperature Supercritical Fluid Process on Electrical Performance of Degraded Ni/β-Ga2O3 Schottky Barrier Diodes
摘要
Abstract
Advanced semiconductor processes are the key technology for enhancing the electrical performance of β-Ga2O3-based devices and mitigating their degradation issues in service environments.Recent studies have demonstrated that low-temperature supercritical fluid process exhibits remarkable advantages in reducing interface states of semiconductor devices,repairing etching process damage,and improving device stability.In this study,low-temperature supercritical fluid(SCF)treatment was employed on Ni/β-Ga2O3 Schottky barrier diodes(SBDs)that has undergone degradation in air environment.The process was carried out at 130 ℃ and 20 MPa in N2O fluid,and then the mechanism of changes in conductivity and breakdown characteristics of the degraded SBDs before and after SCF treatment were systematically investigated by current-voltage and capacitance-voltage measurements.The results demonstrate that the increase in forward saturation current density of SBDs with SCF treatment is accompanied by bulk traps reduction and series resistance decrease.Schottky barrier height elevation and depletion layer broadening effectively inhibit the electron tunneling,leading to leakage current reduction.Additionally,the study illuminates that interface state density of degraded Ni/β-Ga2O3 SBDs is not significantly affected by SCF treatment,and the interface traps with large time constants do not significantly affect the Schottky barrier height.This study provides critical experimental evidence and theoretical support for the application of low-temperature supercritical fluid process in optimizing the performance of β-Ga2O3-based devices.关键词
低温超临界流体工艺/超宽禁带半导体/β-Ga2O3/肖特基势垒二极管/界面态密度/电学性能Key words
low-temperature supercritical fluid process/ultrawide bandgap semiconductor/β-Ga2O3/Schottky barrier diode/interface state density/electrical performance分类
信息技术与安全科学引用本文复制引用
宋昱杉,欧阳晓平,陈浩,李松,杨明超,杨松泉,杨森,周磊簜,耿莉,郝跃..低温超临界流体工艺对退化的Ni/β-Ga2O3肖特基势垒二极管电学性能的影响[J].人工晶体学报,2025,54(9):1574-1583,10.基金项目
国家重点实验室稳定支持基金(JBSY252800260) （JBSY252800260）
宽禁带半导体器件与集成技术全国重点实验室开放基金(2413S121) （2413S121）
国家自然科学基金(62204198) （62204198）
