现代电子技术2025，Vol.48Issue(20)：45-50,6.DOI:10.16652/j.issn.1004-373x.2025.20.008
一种双波段GaN高效率功率放大器
Dual band GaN high efficiency power amplifier
杨琳 1张龙龙 1高瑞龙 1杨云飞 1王金晓 1张秀清1
作者信息
- 1. 河北科技大学 信息科学与工程学院,河北 石家庄 050000
- 折叠
摘要
Abstract
With the rapid development of wireless communication technology,the demand for multi-band communication systems has been increasing in recent years.On this basis,a design method of dual-band power amplifier is proposed,and a GaN based P/S band dual frequency power amplifier is designed.In this amplifier,inter-stage matching network(ISMN)and input matching network(IMN)are used to realize dual-band function of power amplifier.The output matching network(OMN)is designed by means of the theory of capacitor self-resonance,which provides a short circuit point for the power amplifier signal,thus achieving the stable operation of the circuit in the dual-band.The simulation results show that when the frequency is the P band,the small-signal gain of the amplifier is greater than 29.4 dB,the saturation output power(Psat)is greater than 40.2 dBm,and the power additional efficiency(PAE)is 62%to 66.2%;when the frequency is S band,the amplifier has a small signal gain greater than 29.7 dB,a saturation output power of more than 39.1 dBm,and a PAE of 52.3%to 66.3%.关键词
GaN/功率放大器/双频段/级间匹配网络/输入匹配网络/功放信号Key words
GaN/power amplifier/dual-band/inter-stage matching network/input matching network/power amplifier signal分类
信息技术与安全科学引用本文复制引用
杨琳,张龙龙,高瑞龙,杨云飞,王金晓,张秀清..一种双波段GaN高效率功率放大器[J].现代电子技术,2025,48(20):45-50,6.
