首页|期刊导航|International Journal of Extreme Manufacturing|Tailoring the number of lines for IGO-channel 2T0C DRAM comparable to conventional 2-line operation 1T1C structure for highly scaled cell volume

Tailoring the number of lines for IGO-channel 2T0C DRAM comparable to conventional 2-line operation 1T1C structure for highly scaled cell volume

Jae-Hyeok Kwag Su-Hwan Choi Daejung Kim Jun-Yeoub Lee Taewon Hwang Hye-Jin Oh Chang-Kyun Park Jin-Seong Park

International Journal of Extreme Manufacturing2025，Vol.7Issue(5)：P.404-414,11.

International Journal of Extreme Manufacturing2025，Vol.7Issue(5)：P.404-414,11.DOI:10.1088/2631-7990/add7a3

Tailoring the number of lines for IGO-channel 2T0C DRAM comparable to conventional 2-line operation 1T1C structure for highly scaled cell volume

Jae-Hyeok Kwag ¹Su-Hwan Choi ¹Daejung Kim ²Jun-Yeoub Lee ¹Taewon Hwang ³Hye-Jin Oh ³Chang-Kyun Park ⁴Jin-Seong Park⁵

作者信息

1. Division of Nanoscale Semiconductor Engineering,Hanyang University,222 Wangsimni-ro,Seongdong-gu,Seoul 04763,Republic of Korea
2. Department of Display Science and Engineering,Hanyang University,222 Wangsimni-ro,Seongdong-gu,Seoul 04763,Republic of Korea
3. Division of Materials Science and Engineering,Hanyang University,222 Wangsimni-ro,Seongdong-gu,Seoul 04763,Republic of Korea
4. Nano Convergence Leader Program for Materials,Parts,and Equipment,Hanyang University,222 Wangsimni-ro,Seongdong-gu,Seoul 04763,Republic of Korea
5. Division of Nanoscale Semiconductor Engineering,Hanyang University,222 Wangsimni-ro,Seongdong-gu,Seoul 04763,Republic of Korea Department of Display Science and Engineering,Hanyang University,222 Wangsimni-ro,Seongdong-gu,Seoul 04763,Republic of Korea Division of Materials Science and Engineering,Hanyang University,222 Wangsimni-ro,Seongdong-gu,Seoul 04763,Republic of Korea
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摘要

关键词

capacitor-less 2T0C DRAM/cell design and operation/atomic layer deposition/oxide semiconductor/monolithic stacked

分类

信息技术与安全科学

引用本文复制引用

Jae-Hyeok Kwag,Su-Hwan Choi,Daejung Kim,Jun-Yeoub Lee,Taewon Hwang,Hye-Jin Oh,Chang-Kyun Park,Jin-Seong Park..Tailoring the number of lines for IGO-channel 2T0C DRAM comparable to conventional 2-line operation 1T1C structure for highly scaled cell volume[J].International Journal of Extreme Manufacturing,2025,7(5):P.404-414,11.

基金项目

supported by the Technology Innovation Program(Grant Nos.20017382 and 20023023) （Grant Nos.20017382 and 20023023）

funded by the Ministry of Trade,Industry&Energy(MOTIE,Republic of Korea) （MOTIE,Republic of Korea）

supported by a National Research Foundation of Korea(NRF)grant funded by the Korean Government(MSIT)(Grant No.RS-2023-00260527). （NRF）

International Journal of Extreme Manufacturing

ISSN：2631-8644

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