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Bias voltage-switchable metal-insulator transition in 2D van der Waals TMDs FETs:Role of tunneling barriers

Shida Huo Fanying Meng Zhe Zhang Yuan Xie Xiaodong Hu Enxiu Wu

Nano Research2025，Vol.18Issue(9)：P.1193-1200,8.

Nano Research2025，Vol.18Issue(9)：P.1193-1200,8.DOI:10.26599/NR.2025.94907703

Bias voltage-switchable metal-insulator transition in 2D van der Waals TMDs FETs:Role of tunneling barriers

Shida Huo ¹Fanying Meng ¹Zhe Zhang ¹Yuan Xie ²Xiaodong Hu ¹Enxiu Wu¹

作者信息

1. State Key Laboratory of Precision Measurement Technology and Instruments,School of Precision Instruments and Opto-electronics Engineering,Tianjin University,Tianjin 300072,China
2. School of Electronics and Information Engineering,Tiangong University,Tianjin 300387,China Laboratory of Solid State Microstructures,Nanjing University,Nanjing 210093,China
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摘要

关键词

two-dimensional transition metal dichalcogenides/metal-insulator transition/Schottky barrier/charge-injection mechanisms/van der Waals(vdW)gaps

分类

信息技术与安全科学

引用本文复制引用

Shida Huo,Fanying Meng,Zhe Zhang,Yuan Xie,Xiaodong Hu,Enxiu Wu..Bias voltage-switchable metal-insulator transition in 2D van der Waals TMDs FETs:Role of tunneling barriers[J].Nano Research,2025,18(9):P.1193-1200,8.

基金项目

supported by the open research of Songshan Lake Materials Laboratory(No.2023SLABFK07) （No.2023SLABFK07）

the National Science Foundation of China(Nos.62304151,62204170,and 62474124) （Nos.62304151,62204170,and 62474124）

the Natural Science Foundation of Tianjin(No.24JCQNJC00520) （No.24JCQNJC00520）

the China Postdoctoral Science Foundation(No.2023M742585) （No.2023M742585）

the State Key Laboratory of Fluid Power and Mechatronic Systems under Grant(No.GZKF-202327). （No.GZKF-202327）

Nano Research

ISSN：1998-0124

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