辐射防护2025，Vol.45Issue(5)：445-458,14.
直接型半导体中子探测器的研究进展及展望
Research progress and prospects of direct semiconductor neutron detectors
王林靖 1王川 2李华 3李德源 1陈法国 3刘立业 1张鹏鹏1
作者信息
- 1. 中国辐射防护研究院,太原 030006
- 2. 核电运行研究(上海)有限公司,上海 200126
- 3. 中国辐射防护研究院,太原 030006||核药研发转化与精准防护山西省重点实验室,太原 030006
- 折叠
摘要
Abstract
Direct semiconductor neutron detectors have significant advantages such as small volume,theoretical detection efficiency of 100%,and simple device structure,making them a key direction for the future development of semiconductor neutron detectors.Currently,novel materials with distinct neutron response capabilities suitable for fabricating direct-type semiconductor neutron detectors include h-BN,LiInSe2 and LiInP2 Se6.This paper provides a detailed review of the latest advancements in research on direct semiconductor neutron detectors based on h-BN,LiInSe2 and LiInP2 Se6.The review includes the following aspects:crystal growth,characterization and optimization of growth processes;electrical properties of crystals and carrier transport capability;detector structure design and neutron detection performance testing.This paper also summarizes the current research status and development trends,and offers an outlook on the future of direct semiconductor neutron detectors.关键词
直接型半导体中子探测器/晶体制备/电学特性/器件结构/中子探测能力Key words
direct semiconductor neutron detectors/crystal growth/electrical properties/device structure/neutron detection performance分类
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王林靖,王川,李华,李德源,陈法国,刘立业,张鹏鹏..直接型半导体中子探测器的研究进展及展望[J].辐射防护,2025,45(5):445-458,14.
