化工进展2025，Vol.44Issue(9)：5255-5264,10.DOI:10.16085/j.issn.1000-6613.2024-1079
硅基前体在先进集成电路制造中的应用与技术进展
Application and technological progress of silicon-based precursors in advanced integrated circuit manufacturing
摘要
Abstract
This paper presents a review of the application and technological progress of silicon-based precursors in advanced integrated circuit manufacturing.With the advancement of integrated circuit fabrication technology,particularly in the development of advanced processes such as 28nm/14nm/7nm,new requirements were being established for transistor devices,processes and materials.Silicon-based precursor materials played a pivotal role in epitaxial processes,lithographic processes,chemical vapour deposition(CVD)and atomic layer deposition(ALD)for wafer fabrication due to their high purity and specific performance parameters.The article analyzed and discussed the current application status,research progress,as well as synthesis and purification process technologies of several major silicon-based precursor materials,including pentachloroethylsilane(PCDS),diethoxymethylsilane(DEMS),diisopropylaminosilane(DIPAS),hexamethyldisilazane(HMDS),ethyl orthosilicate(TEOS),monochlorosilane(MCS),trimethylsilylamine(TSA),bis(tert-butylamino)silane(BTBAS)and others.关键词
硅基前体/先进集成电路/化学气相沉积/原子层沉积/合成工艺/提纯技术Key words
silicon-based precursors/advanced integrated circuits/CVD/ALD/synthesis process/purification technology分类
信息技术与安全科学引用本文复制引用
刘见华,袁振军,常欣,赵喜哲,万烨,余学功,杨德仁..硅基前体在先进集成电路制造中的应用与技术进展[J].化工进展,2025,44(9):5255-5264,10.基金项目
工信部产业基础再造和制造业高质量发展专项(TC230A076-228). （TC230A076-228）
