化工进展2025，Vol.44Issue(9)：5285-5291,7.DOI:10.16085/j.issn.1000-6613.2024-1108
基于DBR和Rugate型多层多孔硅优化光致发光性能
Optimization of photoluminescence properties based on DBR and Rugate multilayer structure of porous silicon
摘要
Abstract
The key to improve the quality and performance of optical sensors is to prepare luminescent materials with specific frequency and strong luminescence intensity.Two kinds of porous silicon(PSi)samples,namely Distributed Bragg Reflector(DBR)and rugate filter(Rugate),were prepared by electrolysis method by anodic etching of heavily doped N-type monocrystal silicon with square wave current and sinusoidal wave current under illumination.Compared with monolayer porous silicon obtained by constant etching current,DBR PSi and Rugate PSi exhibited double excellent optical properties,namely Bragg reflection and photoluminescence spectra with narrow wavelength distribution.The morphology and structure of DBR PSi,Rugate PSi and single-layer PSi samples were characterized by electron scanning microscope(SEM).The formation mechanism of DBR PSi and Rugate PSi samples with excellent reflection spectra and photoluminescence spectra was discussed based on etching parameters and SEM characterization results.The reflection and photoluminescence spectra of DBR PSi and Rugate PSi overlapped at the same wavelength through the precise adjustment of etching current,etching time and layer number.The two light waves interfered with each other in phase length,which effectively enhanced the photoluminescence intensity.关键词
量子点/折射率/多孔硅/光致发光/反射Key words
quantum dot/refractive index/porous silicon/photoluminescence/reflectivity分类
数理科学引用本文复制引用
周自成,贺洁雅,孔令伟,范小振..基于DBR和Rugate型多层多孔硅优化光致发光性能[J].化工进展,2025,44(9):5285-5291,7.基金项目
河北省高等学校科学研究项目(ZC2025047). （ZC2025047）
