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一种低温漂高精度的带隙基准电压芯片

邵泽川 王婷婷 华攀 刘甲俊

电子科技2025,Vol.38Issue(10):34-41,8.
电子科技2025,Vol.38Issue(10):34-41,8.DOI:10.16180/j.cnki.issn1007-7820.2025.10.005

一种低温漂高精度的带隙基准电压芯片

A Low-Temperature Drift High-Precision Bandgap Voltage Reference Chip

邵泽川 1王婷婷 1华攀 1刘甲俊2

作者信息

  • 1. 南京信息工程大学 电子与信息工程学院,江苏 南京 210000
  • 2. 中国电子科技集团公司第五十八研究所,江苏 无锡 214000
  • 折叠

摘要

Abstract

A stable input voltage that does not change with the external environment plays an important role in the proper operation of portable and handheld test equipment,the voltage reference chip used in such equipment must have the characteristics of low temperature drift,high power supply rejection ratio,strong load carrying capacity and wide applicability.In order to meet the above requirements,a high-order compensated bandgap reference chip is de-signed based on the traditional Kuijk bandgap reference circuit.The band-gap reference voltage source uses the oper-ational amplifier with backgate input and the resistance with different temperature characteristics to compensate the temperature drift.The output buffer stage is added to the traditional structure,and the output voltage can be adjusted while the load capacity is improved.A variety of output voltages ranging from 1.25 to 4.00 V can be covered by local revision of the layout or fusing.The simulation results show that the maximum output voltage of the band-gap refer-ence voltage source is 1.08 mV and the temperature coefficient is 2.4 ppm·℃-1 in the temperature range of-55~125℃.At 10 Hz,the power supply rejection ratio is-87 dB,the linear adjustment rate is 0.014 4%,and the load capacity is 42 mA.The circuit adopts 0.18 μm BCD(Bipolar-CMOS-DMOS)technology to realize the flow sheet,which has been applied to the actual equipment.

关键词

基准电压源/背栅输入运放/电阻温度特性补偿/温度系数/电源抑制比/带载能力/熔丝修条/芯片设计

Key words

voltage references/backgate input opamp/compensation of resistance temperature characteristics/temperature coefficient/power supply rejection ratio/load capacity/fuse repair strip/chip design

分类

信息技术与安全科学

引用本文复制引用

邵泽川,王婷婷,华攀,刘甲俊..一种低温漂高精度的带隙基准电压芯片[J].电子科技,2025,38(10):34-41,8.

基金项目

教育部产学合作协同育人项目(230802721010011)Ministry of Education Industry-University Cooperation and Collaborative Education Project(230802721010011) (230802721010011)

电子科技

1007-7820

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