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首页|期刊导航|Journal of Semiconductors|High-responsivity and high-speed germanium photodetector for C+L application

High-responsivity and high-speed germanium photodetector for C+L application

Yiling Hu Zhipeng Liu Zhi Liu Yupeng Zhu Tao Men Guangze Zhang Jun Zheng Yuhua Zuo Buwen Cheng

Journal of Semiconductors2025,Vol.46Issue(10):P.59-65,7.
Journal of Semiconductors2025,Vol.46Issue(10):P.59-65,7.DOI:10.1088/1674-4926/25030017

High-responsivity and high-speed germanium photodetector for C+L application

Yiling Hu 1Zhipeng Liu 1Zhi Liu 1Yupeng Zhu 1Tao Men 1Guangze Zhang 1Jun Zheng 1Yuhua Zuo 1Buwen Cheng1

作者信息

  • 1. State Key Laboratory of Optoelectronic Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China College of Materials Science and Opto-electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China
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摘要

关键词

silicon photonics/germanium photodetector/asymmetric structure/DBR

分类

信息技术与安全科学

引用本文复制引用

Yiling Hu,Zhipeng Liu,Zhi Liu,Yupeng Zhu,Tao Men,Guangze Zhang,Jun Zheng,Yuhua Zuo,Buwen Cheng..High-responsivity and high-speed germanium photodetector for C+L application[J].Journal of Semiconductors,2025,46(10):P.59-65,7.

基金项目

supported by National Key Research and Development Program of China(2022YFB2802400) (2022YFB2802400)

National Natural Science Foundation of China(62250010,62090054,62274160) (62250010,62090054,62274160)

Youth Innovation Promotion Association of the Chinese Academy of Sciences(2021111). (2021111)

Journal of Semiconductors

1674-4926

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