辐射研究与辐射工艺学报2025，Vol.43Issue(5)：31-42,12.DOI:10.11889/j.1000-3436.2025-0031
γ辐射制备掺杂ZnO纳米材料及其作为电子传输层的应用研究
Study on the γ-radiation preparation of doped ZnO nanomaterials and their application as electron transport layers
摘要
Abstract
This study employs a γ-radiation-induced synthesis method to prepare zinc oxide(ZnO)and metal-doped ZnO(M-ZnO,M=Mg/Li/Al/Ga/Ni/Fe)nanomaterials for enhancing the performance of electron transport layers(ETLs)in optoelectronic devices.Using a 60Co irradiation facility(dose rate:6.25 kGy/h),precursor solutions were irradiated at doses of 40-200 kGy to achieve low-temperature,high-efficiency crystallization.X-ray diffraction and scanning electron microscope characterization revealed that a 150 kGy dose optimized ZnO grain size and crystallinity,forming rod-like structures,with UV-vis absorption spectra indicating a bandgap of 3.03 eV.Doping experiments demonstrated that Ni/Al/Ga enhanced fluorescence intensity(400-450 nm),while Fe/Li doping significantly reduced current density in single-layer ETL devices(J-V curve tests)while maintaining>70%visible-light transmittance.Compared to traditional sol-gel methods,γ-irradiated ZnO exhibited a lower bandgap(2.90-3.19 eV)without high-temperature treatment.Device performance validation confirmed that Fe/Li-doped ZnO effectively balanced carrier transport and defect suppression,offering a green synthesis strategy for ETL design in quantum dot light-emitting diodes(QLEDs)and perovskite solar cells.关键词
氧化锌/γ射线辐照/电子传输层/掺杂/低温合成Key words
Zinc oxide/γ-ray irradiation/Electron transport layer/Doping/Low-temperature synthesis分类
能源科技引用本文复制引用
靳笑天,张伟,闫佳慧,刘研研,田兴友,王化..γ辐射制备掺杂ZnO纳米材料及其作为电子传输层的应用研究[J].辐射研究与辐射工艺学报,2025,43(5):31-42,12.基金项目
适合量产的印刷QLED量子点和电子传输层材料体系开发(2024ZD0604000)和中国科学院合肥研究院院长基金(YZJJQY202405,YZJJ2024QN36) Supported by Development of Printable Quantum Dot and ETL Materials for Mass-Produced QLEDs(2024ZD0604000)and the HFIPS Director's Fund(YZJJQY202405 and YZJJ2024QN36) （2024ZD0604000）
