传感技术学报2025，Vol.38Issue(10)：1727-1733,7.DOI:10.3969/j.issn.1004-1699.2025.10.001
基于SOI BCD工艺的高灵敏度纵向集成型霍尔器件研究
Investigation of High Sensitivity Integrated Vertical Hall Device Based on SOI BCD Technology
摘要
Abstract
Based on 3D simulation,a high sensitive integrated vertical Hall device is presented,which is fabricated by using SOI BCD technology.By incorporating a shallow P-well isolation structure and deep trench fingers(DTFs),the current path distribution is optimized to suppress the short-circuit effect and increase the proportion of longitudinal current,so as to improve the sensitivity of the device.Test results demonstrate that the sensitivity of the new device is 464 V/AT,which is enhanced by 102%compared to conventional structures.The initial offset voltage of the device is 0.64 mV,with an input resistance of 14 kΩ.Within the temperature range of 298 K～398 K,the first-order temperature coefficient of resistance is 8 500×10-6/K,indicating excellent stability.The fabrication process of this device is compatible with existing SOI BCD technology,enabling the fabrication of fully integrated,high-precision magnetic field detection chips.关键词
纵向霍尔器件/全集成/深槽插指/绝缘体上硅/BCDKey words
vertical Hall devices/fully integrated/deep trench fingers/silicon on insulator/Bipolar-CMOS-DMOS分类
信息技术与安全科学引用本文复制引用
孙与飏,李沂宸,郑贵强,张加宏..基于SOI BCD工艺的高灵敏度纵向集成型霍尔器件研究[J].传感技术学报,2025,38(10):1727-1733,7.基金项目
国家重点研发计划(2022YFB3205902,2022YFB3205903) （2022YFB3205902,2022YFB3205903）
