太赫兹科学与电子信息学报2025，Vol.23Issue(10)：1010-1017,8.DOI:10.11805/TKYDA2024345
经典Ⅲ-Ⅴ族半导体的太赫兹电磁特性
Terahertz electromagnetic properties of classic Ⅲ-Ⅴ semiconductors
摘要
Abstract
Gallium antimonide(GaSb),indium antimonide(InSb),indium arsenide(InAs),and indium phosphide(InP)are important materials among classic Ⅲ-Ⅴ semiconductors.They exhibit significant electromagnetic properties in the terahertz(THz)band and show broad application prospects in various fields.This paper utilizes all fiber terahertz time-domain spectroscopy to study the electromagnetic properties of GaSb,InSb,InAs,and InP in free space within the 0.5～1.5 THz.The reflection signals of these materials in this band are measured,then the time-domain signals are converted to frequency-domain signals through Fourier transform.Furthermore,important electromagnetic parameters such as complex refractive index and dielectric constant are calculated by using the Kramers-Kronig(K-K)relation.The variation of the dielectric constant of Ⅲ-Ⅴ semiconductor materials in the terahertz frequency range are observed with different carrier concentrations and mobilities.As the carrier concentration increases,the imaginary part of the dielectric constant increases while the real part decreases.As the mobility increases,the imaginary part of the dielectric constant increases,and the real part decreases.This conclusion is expected to be applied to the design of terahertz devices based on classical Ⅲ-Ⅴ semiconductors.关键词
太赫兹/Ⅲ-Ⅴ族半导体/反射光谱法/全光纤太赫兹波时域光谱系统Key words
terahertz(THz)/Ⅲ-Ⅴ semiconductor/reflectance spectroscopy/all fiber terahertz time-domain spectroscopy system分类
信息技术与安全科学引用本文复制引用
李瑾,王爽,黄海,李泉..经典Ⅲ-Ⅴ族半导体的太赫兹电磁特性[J].太赫兹科学与电子信息学报,2025,23(10):1010-1017,8.基金项目
国家自然科学基金资助项目(62275195) （62275195）
天津市教委科研计划资助项目(2020KJ125) （2020KJ125）
