太赫兹科学与电子信息学报2025，Vol.23Issue(10)：1107-1112,6.DOI:10.11805/TKYDA2024225
基于离化波导通机制的快速半导体开关
Fast switching semiconductor device based on impact ionization wave
摘要
Abstract
Fast Ionization Dynistors(FID)is a power semiconductor device characterized by high power capacity,fast conduction speed,high repetition rate,and low jitter,making it an ideal switch for developing solid-state pulse sources.In this paper,the working principle of the fast ionization switch is introduced and the physical process during the switching is investigated.An FID sample with a withstand voltage of 3.5 kV has been developed and tested using a Drift Step Recovery Diode(DSRD)fast trigger circuit,which can output a voltage pulse with voltage rising rate(d U/dt)greater than 3 kV/ns.The results show that the FID sample operates in the fast ionization conduction state with switching time of about 700 ps,current of 706 A and the breakdown voltage of 7.37 kV which is almost twice the static breakdown voltage.Good consistency of the voltage and current waveforms is achieved under the 50 Hz repetition frequency operation.关键词
功率半导体器件/快速离化波/亚纳秒导通/固态源Key words
power semiconductor devices/fast ionization wave/sub-nanosecond switching/solid-state pulse power source分类
电子信息工程引用本文复制引用
王淦平,金晓,刘冰,李飞,宋法伦,吴朝阳..基于离化波导通机制的快速半导体开关[J].太赫兹科学与电子信息学报,2025,23(10):1107-1112,6.基金项目
国家高技术研究计划资助项目 （）
