中国电机工程学报2025，Vol.45Issue(19)：7721-7742,中插46,23.DOI:10.13334/j.0258-8013.pcsee.241799
焊接和压接型IGBT的劣化机理与状态检测综述
Overview of Degradation Mechanisms and Status Detection for Wire-bond and Press-pack IGBTs
摘要
Abstract
The insulated gate bipolar transistor(IGBT)is the core power conversion component of flexible direct current transmission technology,and its reliability is crucial for the safe and stable operation of flexible direct current transmission systems.Sensor-based methods for detecting the status of IGBT devices can improve their operational reliability and reduce the economic losses caused by device failures.This paper first explores the similarities and differences in the degradation mechanisms and main failure modes of soldered IGBTs and press-pack IGBTs.Then,based on the various packaging forms of IGBTs,a detailed review of the research status of IGBT condition monitoring methods is presented from two perspectives:embedded detection and non-contact detection,focusing on physical parameters such as temperature,current,stress waves,and stress-strain.Based on the current state of research,this paper summarizes the challenges and limitations of existing studies and discusses future research directions for IGBT status detection technology.关键词
绝缘栅双极晶体管/状态检测/检测技术/劣化机理/应力Key words
insulated gate bipolar transistor(IGBT)/status detection/detection technology/degradation mechanism/stress分类
动力与电气工程引用本文复制引用
何赟泽,何洪英,李佐胜,李祺颖,张超峰,常珊,康文,耿学锋,唐龙海,平阳,张杰..焊接和压接型IGBT的劣化机理与状态检测综述[J].中国电机工程学报,2025,45(19):7721-7742,中插46,23.基金项目
国家电网有限公司科技项目(5216A324000V).Science and Technology Project of State Grid Corporation of China(5216A324000V). （5216A324000V）
