中国粉体技术2025，Vol.31Issue(5)：123-134,12.DOI:10.13732/j.issn.1008-5548.2025.05.010
Mg2+、Zr4+共掺ZnGa2O4:Cr3+基近红外长余辉荧光材料的结构及性能调控
Structure and performance regulation of Mg2+,Zr4+co-doped ZnGa2O4:Cr3+-based near-infrared long persistent luminescence phosphors
摘要
Abstract
Objective To address the growing demands for excitation-free optical temperature sensing in modern engineering and anti-counterfeiting technologies,it is crucial to improve the persistent luminescence and optical temperature-sensing performance of near-infrared(NIR)long persistent luminescence phosphors,broadening their application scenarios. Methods The ZnGa2-x(Mg-Zr)xO4:Cr3+(ZGMZC,x=0-0.2)NIR long persistent luminescence phosphors were synthesized via a high-temperature solid-state method by co-doping Mg2+and Zr4+into ZnGa2O4:Cr3+.A systematic analysis was conducted to investigate the effects of different Mg2+-Zr4+doping amounts on the phase structure,luminescence,and persistent luminescence performance of the ZnGa2O4system.Moreover,the material's potential for temperature sensing under natural light excitation was explored. Results and Discussion The maximum doping amount of Mg2+-Zr4+was 10％.An increase in Mg2+-Zr4+doping content was obser-ved to enlarge the grain size while progressively widening the band gap.After high-temperature calcination,the samples exhib-ited strong capability for visible light absorption.The Mg2+-Zr4+doping facilitated the formation of anti-site defects,thereby increasing defects in the matrix.Consequently,the R-line emission and its Stokes and anti-Stokes phonon sidebands(PSB)gradually weakened in the emitted light,while the N-line emission gradually strengthened.However,excessive doping enhanced energy transfer between Cr3+and defects,which promoted more non-radiative transitions,causing energy loss and weakened luminescence.Furthermore,as the Mg2+-Zr4+doping amount rose,the sample's persistent luminescence initially increased and then decreased,with the x=0.05 sample exhibiting the optimal luminescence performance.Under dark conditions,the NIR per-sistent luminescence of the phosphors was enhanced with increasing temperature. Conclusion The persistent luminescence performance of NIR phosphors is significantly enhanced through Mg2+-Zr4+co-doping.The synthesized materials exhibit temperature-dependent long persistent luminescence characteristics,which can be effectively charged under natural light and subsequently emit NIR light.The properties indicate their potential as natural light rechargeable materials for optical temperature sensing.关键词
近红外发光/长余辉荧光材料/光学温度传感/性能调控Key words
near-infrared luminescence/long persistent luminescence phosphors/optical temperature sensing/performance regulation分类
通用工业技术引用本文复制引用
夏侯俊卿,刘宗明,徐斯怡,刘祥雨,谢文龙,蔡雁美,刘易水,徐洁宇,曹立,朱琦..Mg2+、Zr4+共掺ZnGa2O4:Cr3+基近红外长余辉荧光材料的结构及性能调控[J].中国粉体技术,2025,31(5):123-134,12.基金项目
国家自然科学基金项目,编号:52371057. （）
