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Study of a novel SiC-based light initiated multi-gate semiconductor switch

Chongbiao Luan Jianqiang Yuan Hongwei Liu Longfei Xiao Huiru Sha Le Xu Yang He Lingyun Wang Hongtao Li Yupeng Huang

Journal of Semiconductors2025，Vol.46Issue(11)：P.48-54,7.

Journal of Semiconductors2025，Vol.46Issue(11)：P.48-54,7.DOI:10.1088/1674-4926/25020033

Study of a novel SiC-based light initiated multi-gate semiconductor switch

Chongbiao Luan ¹Jianqiang Yuan ¹Hongwei Liu ¹Longfei Xiao ²Huiru Sha ²Le Xu ¹Yang He ¹Lingyun Wang ¹Hongtao Li ¹Yupeng Huang¹

作者信息

1. Key laboratory of pulsed power,Institute of Fluid Physics,China Academy of Engineering Physics,Mianyang 621900,China
2. Institute of Novel Semiconductors and State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China
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摘要

关键词

SiC/light initiated multi-gate semiconductor switch/leakage current/pulsed power system

分类

信息技术与安全科学

引用本文复制引用

Chongbiao Luan,Jianqiang Yuan,Hongwei Liu,Longfei Xiao,Huiru Sha,Le Xu,Yang He,Lingyun Wang,Hongtao Li,Yupeng Huang..Study of a novel SiC-based light initiated multi-gate semiconductor switch[J].Journal of Semiconductors,2025,46(11):P.48-54,7.

基金项目

supported by Rector’s fund of China Academy of Engineering Physics(Grant No.YZJJZQ2022002) （Grant No.YZJJZQ2022002）

the National Natural Science Foundation of China(Grant No.61504127). （Grant No.61504127）

Journal of Semiconductors

ISSN：1674-4926

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