Journal of Semiconductors2025，Vol.46Issue(11)：P.40-46,7.DOI:10.1088/1674-4926/25020025
Mesa-structured AlGaAsSb APD:dark current and noise analysis
Yuhang He 1Rui Wang 1Yan Liang 2Yingqiang Xu 3Guowei Wang 3Haiqiao Ni 3Shuo Wang 3Zhichuan Niu 3Xiaohong Yang1
作者信息
- 1. State Key Laboratory of Optoelectronic Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China
- 2. State Key Laboratory of Optoelectronic Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China School of Electronic Science and Engineering,Nanjing University,Nanjing 210093,China
- 3. State Key Laboratory of Optoelectronic Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
- 折叠
摘要
关键词
avalanche photodiode/dark current/excess noise分类
电子信息工程引用本文复制引用
Yuhang He,Rui Wang,Yan Liang,Yingqiang Xu,Guowei Wang,Haiqiao Ni,Shuo Wang,Zhichuan Niu,Xiaohong Yang..Mesa-structured AlGaAsSb APD:dark current and noise analysis[J].Journal of Semiconductors,2025,46(11):P.40-46,7.基金项目
supported by the National Natural Science Foundation of China(61774152),which are gratefully acknowledged. （61774152）
