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High-speed electro-absorption modulated laser

Zhenyao Li Chen Lyu Xuliang Zhou Mengqi Wang Haotian Qiu Yejin Zhang Hongyan Yu Jiaoqing Pan

Journal of Semiconductors2025，Vol.46Issue(11)：P.7-18,12.

Journal of Semiconductors2025，Vol.46Issue(11)：P.7-18,12.DOI:10.1088/1674-4926/25030015

High-speed electro-absorption modulated laser

Zhenyao Li ¹Chen Lyu ¹Xuliang Zhou ¹Mengqi Wang ¹Haotian Qiu ¹Yejin Zhang ¹Hongyan Yu ¹Jiaoqing Pan¹

作者信息

1. State Key Laboratory of Optoelectronic Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China
折叠

摘要

关键词

electro-absorption modulation/high-speed laser/modulation bandwidth/data transmission rate

分类

电子信息工程

引用本文复制引用

Zhenyao Li,Chen Lyu,Xuliang Zhou,Mengqi Wang,Haotian Qiu,Yejin Zhang,Hongyan Yu,Jiaoqing Pan..High-speed electro-absorption modulated laser[J].Journal of Semiconductors,2025,46(11):P.7-18,12.

基金项目

supported by the Strategic Priority Research Program of CAS(Grant No.XDB43020202) （Grant No.XDB43020202）

the Natural Science Foundation of China(Grant Nos.61934007,62274153,62090053). （Grant Nos.61934007,62274153,62090053）

Journal of Semiconductors

ISSN：1674-4926

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