Journal of Semiconductors2025，Vol.46Issue(11)：P.2-5,4.DOI:10.1088/1674-4926/25080028
Contact planarization and passivation lift tungsten diselenide PMOS performance
Haoyu Peng 1Ping-Heng Tan 1Jiangbin Wu1
作者信息
- 1. State Key Laboratory of Semiconductor Physics and Chip Technologies,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China
- 折叠
摘要
关键词
contact planarization/metal dichalcogenides tmds which/passivation/pmos performance/advanced complementary metal oxide semiconductor cmos logic/tungsten diselenide/two dimensional materials/transition metal dichalcogenides分类
化学化工引用本文复制引用
Haoyu Peng,Ping-Heng Tan,Jiangbin Wu..Contact planarization and passivation lift tungsten diselenide PMOS performance[J].Journal of Semiconductors,2025,46(11):P.2-5,4.
