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首页|期刊导航|Journal of Semiconductors|Mid-wavelength infrared planar junction photodetector based on InAs/GaSb Type-Ⅱsuperlattices

Mid-wavelength infrared planar junction photodetector based on InAs/GaSb Type-Ⅱsuperlattices

Shihao Zhang Hongyue Hao Ye Zhang Shuo Wang Xiangyu Zhang Ruoyu Xie Lingze Yao Faran Chang Yifan Shan Haofeng Liu Guowei Wang Donghai Wu Dongwei Jiang Yingqiang Xu Zhichuan Niu Wenjing Dong

Journal of Semiconductors2025，Vol.46Issue(11)：P.70-74,5.
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Journal of Semiconductors2025，Vol.46Issue(11)：P.70-74,5.DOI:10.1088/1674-4926/24120014

Mid-wavelength infrared planar junction photodetector based on InAs/GaSb Type-Ⅱsuperlattices

Shihao Zhang 1Hongyue Hao 2Ye Zhang 2Shuo Wang 3Xiangyu Zhang 3Ruoyu Xie 2Lingze Yao 3Faran Chang 3Yifan Shan 2Haofeng Liu 4Guowei Wang 2Donghai Wu 2Dongwei Jiang 2Yingqiang Xu 2Zhichuan Niu 2Wenjing Dong4

作者信息

  • 1. Key Laboratory of Optoelectronic Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China Key Laboratory of Intelligent Sensing System and Security of the Ministry of Education,Hubei Key Laboratory of Micro-Nanoelectronic Materi-als and Devices,School of Microelectronics,Hubei University,Wuhan 430062,China
  • 2. Key Laboratory of Optoelectronic Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China
  • 3. Key Laboratory of Optoelectronic Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
  • 4. Key Laboratory of Intelligent Sensing System and Security of the Ministry of Education,Hubei Key Laboratory of Micro-Nanoelectronic Materi-als and Devices,School of Microelectronics,Hubei University,Wuhan 430062,China
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摘要

关键词

InAs/GaSb type-Ⅱsuperlattices/planar photodetector/mid-wavelength infrared/zinc diffusion

分类

电子信息工程

引用本文复制引用

Shihao Zhang,Hongyue Hao,Ye Zhang,Shuo Wang,Xiangyu Zhang,Ruoyu Xie,Lingze Yao,Faran Chang,Yifan Shan,Haofeng Liu,Guowei Wang,Donghai Wu,Dongwei Jiang,Yingqiang Xu,Zhichuan Niu,Wenjing Dong..Mid-wavelength infrared planar junction photodetector based on InAs/GaSb Type-Ⅱsuperlattices[J].Journal of Semiconductors,2025,46(11):P.70-74,5.

基金项目

supported by the National Key Technologies R&D Program of China(Grant Nos.2024YFA1208904,2019YFA0705203) （Grant Nos.2024YFA1208904,2019YFA0705203）

Major Program of the National Natural Science Foundation of China(Grant Nos.62004189,61274013) （Grant Nos.62004189,61274013）

the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB0460000) （Grant No.XDB0460000）

the Research Foundation for Advanced Talents of the Chinese Academy of Sciences(Grant No.E27RBB03). （Grant No.E27RBB03）

Journal of Semiconductors

1674-4926

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