Ge/ZnS光子晶体的制备及其红外-透波性能OA

In order to solve the problem of low compatibility of infrared stealth and radar transmission performance of Ge/ZnS photonic crystal,the Ge/ZnS photonic crystal structure was simulated by TFCalc simulation software.By changing the thickness and period of the film,the infrared emissivity of 3～5 μm band can be realized as low as 0.005 9.The effects of electron beam current and output voltage on the deposition properties of Ge and ZnS monolayer films were investigated by vacuum evaporation technolo-gy.On this basis,Ge/ZnS photonic crystals were prepared by using better parameters according to the simulation results.The results show that the deposition performance of Ge and ZnS monolayer films is better when the electron beam current is 90 mA and the output voltage is 40％of 220 V,respectively.The emissivity of Ge/ZnS photonic crystal prepared by this parameter is 0.055 at 3～5 μm band.The di-electric constant in the range of 12.4～18 GHz is between 3.34～3.89,and the dielectric loss tangent is between 0.013 1～0.120 8.At this time,the compatibility of infrared stealth and wave transmission performance is high.