纺织高校基础科学学报2025，Vol.38Issue(5)：35-44,10.DOI:10.13338/j.issn.1006-8341.2025.05.005
Ge/ZnS光子晶体的制备及其红外-透波性能
Fabrication of Ge/ZnS photonic crystal and its infrared-wave transmitting properties
摘要
Abstract
In order to solve the problem of low compatibility of infrared stealth and radar transmission performance of Ge/ZnS photonic crystal,the Ge/ZnS photonic crystal structure was simulated by TFCalc simulation software.By changing the thickness and period of the film,the infrared emissivity of 3～5 μm band can be realized as low as 0.005 9.The effects of electron beam current and output voltage on the deposition properties of Ge and ZnS monolayer films were investigated by vacuum evaporation technolo-gy.On this basis,Ge/ZnS photonic crystals were prepared by using better parameters according to the simulation results.The results show that the deposition performance of Ge and ZnS monolayer films is better when the electron beam current is 90 mA and the output voltage is 40％of 220 V,respectively.The emissivity of Ge/ZnS photonic crystal prepared by this parameter is 0.055 at 3～5 μm band.The di-electric constant in the range of 12.4～18 GHz is between 3.34～3.89,and the dielectric loss tangent is between 0.013 1～0.120 8.At this time,the compatibility of infrared stealth and wave transmission performance is high.关键词
光子晶体/隐身技术/真空蒸镀/红外发射率/透波性能Key words
photonic crystal/stealth technology/vacuum evaporation/infrared emissivity/wave transmission performance分类
通用工业技术引用本文复制引用
苏晓磊,王旭江,刘毅,卢琳琳..Ge/ZnS光子晶体的制备及其红外-透波性能[J].纺织高校基础科学学报,2025,38(5):35-44,10.基金项目
陕西省秦创原"科学家+工程师"队伍项目(2025QCY-KXJ-193,2024QCY-KXJ-122) （2025QCY-KXJ-193,2024QCY-KXJ-122）
