电子科技大学学报2025，Vol.54Issue(6)：810-818,9.DOI:10.12178/1001-0548.2024339
集成串转并数字电路的C波段GaAs双通道幅相多功能芯片
C-band GaAs dual-channel amplitude and phase multifunctional chip integrated with digital serial to parallel converter
王测天 1张帆 2刘莹 2羊洪轮 2王为 2廖学介 2周德云3
作者信息
- 1. 西北工业大学微电子学院,西安 710129||成都嘉纳海威科技有限责任公司,成都 610220
- 2. 成都嘉纳海威科技有限责任公司,成都 610220
- 3. 西北工业大学微电子学院,西安 710129
- 折叠
摘要
Abstract
A 5.8 GHz to 6.8 GHz C-band dual-channel amplitude and phase multifunctional chip was developed based on 0.15-μm GaAs enhancement-mode pseudomorphic high electron mobility transistor(E-mode pHEMT)process.The chip integrates 7-bit digitally controlled attenuator,gain compensation low noise amplifier,6-bit digitally controlled phase shifter,power divider,and 30-bit digital serial-to-parallel converter.The integrated serial-to-parallel converter can control the attenuation and phase shift,and is also applied for recognition of chip address.The measured results show that in the reference state,the gains of the two channels are 0dB to-0.5dB and-0.15dB to 0.42 dB,and their measured noises are less than 6.38 dB.In the attenuation state,the attenuation root mean square(RMS)errors of channel 1 and channel 2 are less than 0.35 dB and 0.34 dB,and the associated parasitic phase RMS errors are less than 2.5°and 2.45°,respectively.In the phase shift state,the phase RMS errors of channel 1 and channel 2 are less than 2.27°and 2.36°,and the corresponding parasitic amplitude RMS errors are lower than 0.27 dB.The presented chip exhibits the characteristics of large attenuation bit,high accuracy of attenuation and phase shift,small parasitic amplitude RMS error and parasitic phase RMS error,and a high integration level.关键词
GaAs/双通道幅相多功能芯片/数控衰减器/增益补偿低噪声放大器/数控移相器/串转并数字电路Key words
GaAs/dual-channel amplitude and phase multifunctional chip/digitally controlled attenuator/gain compensation low noise amplifier/digitally controlled phase shifter/digital serial-to-parallel converter分类
电子信息工程引用本文复制引用
王测天,张帆,刘莹,羊洪轮,王为,廖学介,周德云..集成串转并数字电路的C波段GaAs双通道幅相多功能芯片[J].电子科技大学学报,2025,54(6):810-818,9.
