广东工业大学学报2025，Vol.42Issue(6)：18-26,9.DOI:10.12052/gdutxb.250094
一种基于GaAs pHEMT工艺的高效率E类功率放大器设计
A Design of High-efficiency Class E Power Amplifier Based on GaAs pHEMT Process
摘要
Abstract
To address the urgent demand for high-efficiency,high-linearity,and broadband performance in S-band(2～4 GHz)radio frequency power amplifiers(PAs)for 5G Sub-6 GHz communication systems,an innovative design is proposed based on Gallium Arsenide Pseudomorphic High Electron Mobility Transistor(GaAs pHEMT)technology.Traditional silicon-based CMOS processes faced limitations in high-frequency scenarios due to breakdown voltage and parasitic effects,while Gallium Nitride(GaN)technology struggled with cost and integration challenges.The research focused on leveraging the potential of GaAs pHEMT technology to overcome efficiency,bandwidth,and harmonic suppression bottlenecks in S-band PAs and explored its integration in radio frequency front-end modules.The study employed a hybrid π-shaped harmonic matching network combined with reactance compensation technology.A single-stage topology integrated impedance transformation,harmonic suppression,and dynamic parasitic parameter compensation,resolving the limitations of traditional multi-stage LC networks(bandwidth<10%)and excessive area occupation.Off-chip discrete LC compensation modules were introduced to optimize high-frequency parasitic effects,and a two-stage cascaded architecture(driver stage and power stage)enhanced gain and power output.By precisely tuning gate(0.38 V/0.45 V)and drain(6 V)bias voltages,along with symmetric layout design and electromagnetic simulation optimization,nonlinear distortion and DC power consumption were significantly reduced.Experimental results demonstrate that the designed Class-E PA achieves a 15%fractional bandwidth in the 2.45～2.85 GHz range,with a second harmonic suppression ratio exceeding 20 dB(at 5.3 GHz)and optimized load impedance of 50 Ω.The measured power-added efficiency(PAE)reaches 56.4%at the center frequency of 2.65 GHz,with an output power of 26.2 dBm and a gain of 26 dB,outperforming existing solutions.关键词
砷化镓赝配高电子迁移率晶体管/E类功率放大器/并联π型谐波匹配网络/电抗补偿技术/5G Sub-6 GHz通信系统Key words
GaAs pHEMT/class E power amplifier/parallel π-type harmonic matching network/reactance compensation technology/5G Sub-6 GHz communication system分类
信息技术与安全科学引用本文复制引用
刘柯,曾琳淇,叶志聪,张志浩,章国豪..一种基于GaAs pHEMT工艺的高效率E类功率放大器设计[J].广东工业大学学报,2025,42(6):18-26,9.基金项目
国家重点研发计划项目(2018YFB1802100) （2018YFB1802100）
广东省"珠江人才计划"本土创新科研团队资助项目(2017BT01X168) （2017BT01X168）
