量子电子学报2025，Vol.42Issue(6)：733-749,17.DOI:10.3969/j.issn.1007-5461.2025.06.001
极紫外光刻掩模仿真和缺陷补偿算法研究进展
Research progress on simulation and defect compensation algorithms for extreme ultraviolet lithography masks
摘要
Abstract
Extreme ultraviolet(EUV)lithography is currently the mainstream lithography technology for mass production of 7 nm and below technology node chips internationally.Whether it has high imaging quality is an important prerequisite for ensuring the performance of lithography systems,however,the imaging quality of the system is directly affected by the quality of lithography masks.Ideal"zero-defect"lithography masks cannot actually be manufactured,and the presence of defects can seriously affect the quality of exposure imaging.Therefore,compensating for EUV lithography mask defects is an indispensable key technology for EUV lithography.To achieve efficient and high-precision defect compensation,a significant amount of lithography simulation is indispensable.Mask simulation,system imaging simulation,and compensation strategies all have an impact on the efficiency of compensation.Therefore,exploring efficient and high-precision mask simulation models and system imaging models is of great significance.In this regard,this work systematically reviews the mask imaging simulation algorithms and mask defect compensation strategies for EUV lithography,analyzes the advantages and limitations of different methods,and explores the development trend of mask defect compensation strategies.关键词
光刻技术/极紫外光刻/掩模仿真/缺陷补偿/成像仿真Key words
lithography/extreme ultraviolet lithography/mask simulation/defect compensation/imaging simulation分类
信息技术与安全科学引用本文复制引用
赵敏,辛颖,匡尚奇..极紫外光刻掩模仿真和缺陷补偿算法研究进展[J].量子电子学报,2025,42(6):733-749,17.基金项目
国家自然科学基金区域联合基金重点项目(U22A2070) （U22A2070）
