实验科学与技术2025，Vol.23Issue(6)：9-16,8.DOI:10.12179/1672-4550.20240162
SiC MOSFET雪崩可靠性验证实验平台研制
Development of a Testbench for Avalanche Reliability Verification of SiC MOSFET
摘要
Abstract
To meet the teaching and experimental demands for evaluating the avalanche breakdown robustness and reliability of power SiC MOSFET devices,a custom testbench for avalanche reliability verification has been developed.A design and application scheme for the power SiC MOSFET gate drive circuit was proposed.Through establishing an equivalent circuit model for the testbench and performing parameter simulation,the test circuit board was designed and fabricated.The complete experimental platform was constructed,and reliability experiments and research were conducted on commercial SiC MOSFET devices.The current and voltage response curves before and after device failure were analyzed,and the influence of different inductive loads on avalanche characteristics was studied.The experimental results align with the theoretical laws of power MOSFET devices,verifying the effectiveness of the developed testbench.The platform features strong openness,functional extensibility,and low cost,making it suitable for educational training and innovative research in power devices.It provides a testing platform for cultivating outstanding engineers in China's power device and chip industry.关键词
功率SiC MOSFET/雪崩鲁棒性/实验平台/电路设计/印制电路板Key words
power SiC MOSFET/avalanche robustness/testbench/circuit design/PCB分类
信息技术与安全科学引用本文复制引用
刘冬,朱辰,林超彪,任娜,屈万园..SiC MOSFET雪崩可靠性验证实验平台研制[J].实验科学与技术,2025,23(6):9-16,8.基金项目
浙江省自然科学基金(LTGC24F040001) （LTGC24F040001）
浙江省教育厅一般科研项目(Y202351231) （Y202351231）
浙江省自然科学基金青年原创(LDQ24F040001). （LDQ24F040001）
