首页|期刊导航|无机材料学学报(英文)|Development of n-type Ti2CoNiSb2 double half-Heusler compound by the breaking of valence-balanced rule and achieving high thermoelectric performance via Bi/Cu co-doping
Development of n-type Ti2CoNiSb2 double half-Heusler compound by the breaking of valence-balanced rule and achieving high thermoelectric performance via Bi/Cu co-doping
Rahidul Hasan Seungki Jo Seung Yong Lee Yan Gu Kyung Tae Kim Dong Won Chun Sang-il Kim Hyun-Sik Kim Kyu Hyoung Lee
无机材料学学报(英文)2025,Vol.11Issue(6):39-50,12.
无机材料学学报(英文)2025,Vol.11Issue(6):39-50,12.DOI:10.1016/j.jmat.2025.101114
Development of n-type Ti2CoNiSb2 double half-Heusler compound by the breaking of valence-balanced rule and achieving high thermoelectric performance via Bi/Cu co-doping
Development of n-type Ti2CoNiSb2 double half-Heusler compound by the breaking of valence-balanced rule and achieving high thermoelectric performance via Bi/Cu co-doping
摘要
关键词
Thermoelectrics/Half-heusler/Double half-heusler/Co-doping/Weighted mobilityKey words
Thermoelectrics/Half-heusler/Double half-heusler/Co-doping/Weighted mobility引用本文复制引用
Rahidul Hasan,Seungki Jo,Seung Yong Lee,Yan Gu,Kyung Tae Kim,Dong Won Chun,Sang-il Kim,Hyun-Sik Kim,Kyu Hyoung Lee..Development of n-type Ti2CoNiSb2 double half-Heusler compound by the breaking of valence-balanced rule and achieving high thermoelectric performance via Bi/Cu co-doping[J].无机材料学学报(英文),2025,11(6):39-50,12.基金项目
R.H.,S.J.,and S.Y.L.contributed equally to this work.This research was supported by Nano·Material Technology Develop-ment Program through National Research Foundation of Korea(NRF)funded by the Ministry of Science and ICT(Grant Nos.RS-2022-NR068194 and RS-2024-00449743). (NRF)