首页|期刊导航|无机材料学学报(英文)|Vacancy modulation dramatically enhances the thermoelectric performance of InTe single crystal
无机材料学学报(英文)2025,Vol.11Issue(2):250-257,8.DOI:10.1016/j.jmat.2024.03.018
Vacancy modulation dramatically enhances the thermoelectric performance of InTe single crystal
Vacancy modulation dramatically enhances the thermoelectric performance of InTe single crystal
摘要
关键词
Anisotropic transports/Thermoelectric properties/Crystal growth/InTe/First-principle calculationsKey words
Anisotropic transports/Thermoelectric properties/Crystal growth/InTe/First-principle calculations引用本文复制引用
Jianghe Feng,Peijian Lin,Binbin Jiang,Jianmin Yang,Mingyuan Hu,Abid Ahmad,Lin Xie,Jiaqing He..Vacancy modulation dramatically enhances the thermoelectric performance of InTe single crystal[J].无机材料学学报(英文),2025,11(2):250-257,8.基金项目
This work was financially supported by the National Natural Science Foundation of China(Grant No.11934007),the Science and Technology Innovation Committee Foundation of Shenzhen(Grant No.JCYJ20200109141205978),and the Outstanding Talents Training Fund in Shenzhen(202108). (Grant No.11934007)